中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC8LA4GT8 | AF | TO-252-2L | Single N | 100 | 9.8 | 1.6 | 105 | ±20 | |||
| SSC80A4GS6 | AF | SOT-23 | Single N | 100 | 2.2 | 1.5 | 240 | ±20 | |||
| SSC8LA6GN6 | AF | PDFN5X6 | Single N | 100 | 43 | 1.7 | 13 | ±20 | |||
| SSC8LA6GT8 | AF | TO-252-2L | Single N | 100 | 45 | 1.7 | 15 | ±20 | |||
| SSC8LA12GN6 | AF | PDFN5X6 | Single N | 100 | 110 | 2 | 3.6 | ±20 | |||
| SSC8LA12GT4 | AF | TO-220-3L | Single N | 100 | 150 | 2 | 3.6 | ±20 | |||
| SSC8LA14GT6 | AF | TO-263-2L | Single N | 100 | 300 | 3.1 | 1.5 | ±20 | |||
| SSC8LA16GN6 | AF | PDFN5X6-8L | Single N | 100 | 40 | 1.3 | 20 | ±20 | |||
| SSC8LA18GT4 | AF | TO-220-3L | Single N | 100 | 180 | 3.2 | 2.95 | ±20 | |||
| SSC8LA20GT6 | AF | TO-263-2L | Single N | 100 | 120 | 3.1 | 3.5 | ±20 | |||
| SSC8LA20GT4 | AF | TO-220-3L | Single N | 100 | 88 | 2.9 | 4.2 | ±20 | |||
| SSC8LA22GN6 | AF | PDFN5X6-8L | Single N | 100 | 112 | 2.2 | 4.4 | ±20 | |||
| SSC8LA24GN6 | AF | PDFN5X6-8L | Single N | 100 | 110 | 3 | 4.8 | ±20 | |||
| SSC8LA24GT4 | AF | TO-220-3L | Single N | 100 | 126 | 3 | 5.4 | ±20 | |||
| SSC8LA24GT6 | AF | TO-263-3L | Single N | 100 | 104 | 3 | 4.8 | ±20 | |||
| SSC8LA28GT4 | AF | TO-220-3L | Single N | 120 | 102 | 3.5 | 7 | ±20 | |||
| SSC8LA30TN4 | AF | PDFN3.3X3.3-8L | Single N | 100 | 38 | 1.7 | 11.8 | ±20 | |||
| SSC8LA32GN6 | AF | PDFN5X6-8L | Single N | 100 | 81 | 1.7 | 5.4 | ±20 | |||
| SSC80A3GT8 | AF | TO-252-2L | Single P | -100 | -35 | -2 | 33 | ±20 | |||
| SSC8LA8GN6 | AF | PDFN5X6 | Single N | 120 | 78 | 3 | 6.5 | ±20 |