中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LGAC037N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 160 | 3 | 3.7 | 4.2 | ±20 | ||
| LGAC040N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 120 | 3 | 4 | 5 | ±20 | ||
| LGAC062N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 100 | 2 | 6.2 | 7.5 | 6.5 | 8 | ±20 |
| LGAC064N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 80 | 1.5 | 6.4 | 7.7 | 8 | 10 | ±20 |
| LGAC075N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 75 | 1.5 | 7 | 8.5 | 9.5 | 13 | ±20 |
| LGAC080N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 65 | 2 | 8 | 9.5 | 10.5 | 14 | ±20 |
| LGAC125N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 40 | 2 | 12 | 15 | 16 | 22 | ±20 |
| LGAC200N10A | LEADSILICON | PDFNWB5×6-8L | S-N | 100 | 25 | 1.8 | 20 | 24 | 25 | 30 | ±20 |
| LGAM014N10A | LEADSILICON | PDFN8*8 | S-N | 100 | 500 | 3 | 1.4 | 2 | ±20 | ||
| LGLL009N10A | LEADSILICON | TOLL | S-N | 100 | 300 | 3 | 0.9 | 1.26 | ±20 | ||
| LGLL011N10A | LEADSILICON | TOLL | S-N | 100 | 385 | 3 | 1.1 | 1.5 | ±20 | ||
| LGLL013N10A | LEADSILICON | TOLL | S-N | 100 | 500 | 3 | 1.3 | 1.8 | ±20 | ||
| LGLL017N10A | LEADSILICON | TOLL | S-N | 100 | 300 | 3 | 1.6 | 2.2 | ±20 | ||
| LGLL020N10A | LEADSILICON | TOLL | S-N | 100 | 500 | 3 | 2 | 2.8 | ±20 | ||
| LG1U068N10A | LEADSILICON | TO-252-2L | S-N | 100 | 90 | 1.5 | 6.8 | 8 | 7.8 | 11.4 | ±20 |
| LG1U080N10A | LEADSILICON | TO-252-2L | S-N | 100 | 65 | 2 | 8 | 9.5 | 10.5 | 14 | ±20 |
| LG1U100N10A | LEADSILICON | TO-252-2L | S-N | 100 | 53 | 2 | 9 | 14 | 12.5 | 18 | ±20 |
| LG1U125N10A | LEADSILICON | TO-252-2L | S-N | 100 | 40 | 1.8 | 12.5 | 15 | 17 | 22 | ±20 |
| LG1P030N10A | LEADSILICON | TO-220C | S-N | 100 | 195 | 3 | 3 | 3.5 | ±20 | ||
| LG2P034N10A | LEADSILICON | TO-220C | S-N | 100 | 160 | 3 | 3.7 | 4.2 | ±20 |