主页产品 MOSFET 高压MOSFET

高压MOSFET

高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。

可用高压MOSFET型号：{{totalCount}}个

型号	制造商	封装	类型	VDS_Max/V	ID_Max/A	VGS(th)Typ/V	RDS(ON)Typ (mΩ) @VGS 10V	RDS(ON)_Max (mΩ) @VGS 10V	VGS_Max (V)
JMH65R030PSFD	JJM	TO-247-3L	N	650	65	3.8	21	30	±30
JMH65R040ASFD	JJM	TO-247-3L	N	650	71	4	35	40	±20
JMH65R040PSFD	JJM	TO-247-3L	N	650	53	3.9	34	40	±30
JMH65R070PCFD	JJM	TO-220-3L	N	650	37	3.8	60	70	±30
JMH65R070PFFD	JJM	TO-220FP-3L	N	650	22	3.9	59	70	±30
JMH65R070PSFD	JJM	TO-247-3L	N	650	38	3.9	61	70	±30
JMH65R090PCFD	JJM	TO-220-3L	N	650	29	3.8	73	90	±30
JMH65R090PFFD	JJM	TO-220FP-3L	N	650	18	3.8	73	94	±30
JMH65R090PSFD	JJM	TO-247-3L	N	650	29	3.9	76	90	±30
JMH65R090PTLFD	JJM	PowerJE®10x12	N	650	24	3.3	80	90	±30
JMH65R090PZFFD	JJM	TO-3PF	N	650	22	3.8	70	90	±30
JMH65R110ACFD	JJM	TO-220-3L	N	650	35	3.5	99	110	±30
JMH65R110AEFD	JJM	TO-263-3L	N	650	35	3.5	98	110	±30
JMH65R110APLNFD	JJM	DFN8080-4L	N	650	32	3.5	95	110	±30
JMH65R110ASFD	JJM	TO-247-3L	N	650	32	3.5	95	110	±30
JMH65R110PCFD	JJM	TO-220-3L	N	650	22	3.4	93	110	±30
JMH65R110PEFD	JJM	TO-263-3L	N	650	25	3.3	98	110	±30
JMH65R110PFFD	JJM	TO-220FP-3L	N	650	16	3.3	90	110	±30
JMH65R110PPLNFD	JJM	DFN8080-4L	N	650	19	3.3	95	110	±30
JMH65R110PSFD	JJM	TO-247-3L	N	650	26	3.5	97	110	±30

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