中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LGLL008N08A | LEADSILICON | TOLL | S-N | 80 | 300 | 3 | 0.8 | 1.12 | ±20 | ||
| LGLL011N08A | LEADSILICON | TOLL | S-N | 80 | 400 | 3 | 1.1 | 1.5 | 2.5 | 3.8 | ±20 |
| LGBM008N08A | LEADSILICON | TO-263-7L | S-N | 80 | 300 | 3 | 0.8 | 1.12 | ±20 | ||
| LMAC110P08A | LEADSILICON | PDFNWB5×6-8L | S-P | -80 | -80 | -1.9 | 11 | 15 | 12.5 | 18 | ±20 |
| LM1U070N08A | LEADSILICON | TO-252-2L | S-N | 85 | 90 | 3 | 7 | 9.5 | ±20 | ||
| LMCB070N08A | LEADSILICON | TO-263-2L | S-N | 85 | 90 | 3 | 7 | 9 | ±20 | ||
| LGAC025N09A | LEADSILICON | PDFNWB5×6-8L | S-N | 85 | 150 | 3 | 2.5 | 3.5 | ±20 | ||
| LGAM025N09A | LEADSILICON | PDFN8*8 | S-N | 85 | 500 | 3 | 1 | 1.4 | ±20 | ||
| LGLL012N09A | LEADSILICON | TOLL | S-N | 85 | 500 | 3 | 1.2 | 1.7 | ±20 | ||
| LGLL018N09A | LEADSILICON | TOLL | S-N | 85 | 300 | 3 | 1.8 | 2.5 | ±20 | ||
| LGLL023N09A | LEADSILICON | TOLL | S-N | 85 | 300 | 3 | 2.3 | 3.2 | ±20 | ||
| LG2P040N09B | LEADSILICON | TO-220C | S-N | 85 | 150 | 3 | 4.5 | 5.5 | ±20 | ||
| LG1P045N09A | LEADSILICON | TO-220C | S-N | 85 | 120 | 3 | 4.5 | 5.5 | ±20 | ||
| LG2P050N09A | LEADSILICON | TO-220C | S-N | 85 | 120 | 3 | 5.5 | 6.5 | ±20 | ||
| LGCB045N09A | LEADSILICON | TO-263-2L | S-N | 85 | 120 | 3 | 4.5 | 5.5 | ±20 | ||
| LGBM010N09A | LEADSILICON | TO-263-7L | S-N | 85 | 500 | 3 | 1 | 1.4 | ±20 | ||
| LGBM015N09A | LEADSILICON | TO-263-7L | S-N | 85 | 300 | 3 | 1.5 | 2.1 | ±20 | ||
| LGBM023N09A | LEADSILICON | TO-263-7L | S-N | 85 | 300 | 3 | 2.3 | 3.2 | ±20 |