中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC8L610GN6 | AF | PDFN5X6-8L | Single N | 60 | 68 | 1 | 6.7 | ±20 | |||
| SSCU9N60GN6 | AF | PDFN5X6 | Single N | 60 | 50 | 1.0-2.5 | 8.9 | ±20 | |||
| SSC8L610GN4 | AF | PDFN3.3X3.3-8L | Single N | 60 | 58 | 1.6 | 7.2 | ±20 | |||
| SSC8L614GT4 | AF | TO-220-3L | Single N | 60 | 180 | 3 | 2.6 | ±20 | |||
| SSC8161GS6A | AF | SOT-23-3L | Single P | -60 | -4 | -1.6 | 90 | ±20 | |||
| SSC8167GS6A | AF | SOT-23-3L | Single P | -60 | -5 | -1.6 | 63 | ±20 | |||
| SSC8169GS6 | AF | SOT-23 | Single P | -60 | -2.1 | -2 | 155 | ±20 | |||
| SSC8L61GS1 | AF | SOP-8 | Single P | -60 | -30 | -1.8 | 18 | ±20 | |||
| SSC8L61GN4 | AF | PDFN3.3X3.3-8L | Single P | -60 | -37 | -1.6 | 19 | ±20 | |||
| SSC8080GT4 | AF | TO220 | Single N | 80 | 97 | 3 | 6.8 | ±25 | |||
| SSC8080GT8 | AF | TO-252-2L | Single N | 80 | 77 | 3 | 7.3 | ±25 | |||
| SSC8L80GN6 | AF | PDFN5X6 | Single N | 80 | 58 | 2 | 7.5 | ±20 | |||
| SSC8L82GN6 | AF | PDFN5X6 | Single N | 80 | 120 | 3 | 3.7 | ±20 | |||
| SSC8L84PN6 | AF | PDFN5X6-8L | Single N | 80 | 130 | 2.8 | 2.1 | ±20 | |||
| SSC8L82GT4 | AF | TO-220-3L | Single N | 80 | 171 | 3 | 3.8 | ±20 | |||
| SSC8L82GT6 | AF | TO-263-2L | Single N | 80 | 100 | 2.4 | 4.5 | ±25 | |||
| SSC8LA0GN6 | AF | PDFN5X6 | Single N | 100 | 56 | 1.7 | 8.3 | ±20 | |||
| SSC8LA2GN6 | AF | PDFN5X6 | Single N | 100 | 78 | 1.7 | 6.4 | ±20 | |||
| SSC8LA4GS6 | AF | SOT-23 | Single N | 100 | 2.5 | 2 | 120 | ±20 | |||
| SSC8LA4GS6A | AF | SOT-23-3 | Single N | 100 | 3 | 1.6 | 110 | ±20 |