主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
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ID_Max /A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS 4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LGAC048N12A LEADSILICON PDFNWB5×6-8L S-N 120 150 3 4.8 6.7 ±25
LGAC051N12A LEADSILICON PDFNWB5×6-8L S-N 120 110 1.5 5.1 6.2 6.7 8 ±20
LGAC100N12A LEADSILICON PDFNWB5×6-8L S-N 120 60 1.5 10 13 14 17 ±20
LGLL016N12A LEADSILICON TOLL S-N 120 300 3 1.6 2.2 ±25
LGCB048N12A LEADSILICON TO-263-2L S-N 120 180 3 4.8 6.2 ±20
LGBM020N12A LEADSILICON TO-263-7L S-N 120 250 3 2 2.3 2.4 3 ±25
LGBM020N12B LEADSILICON TO-263-7L S-N 120 250 3.5 2 2.5 ±25
LGBM048N12A LEADSILICON TO-263-7L S-N 120 250 3 4.8 6.7 ±25
LM2E2305B LEADSILICON SOT-23 S-P -15 -6 -0.62 22 31 ±10
LMBN135P02A LEADSILICON DFN2020-6L S-P -15 -11 -0.75 13.5 18 ±12
LM2E2333 LEADSILICON SOT-23 S-P -15 -7 -0.62 18 28 ±10
LM1K2N15A LEADSILICON SOT-23 S-N 150 2 2 225 270 ±20
LGAC100N15A LEADSILICON PDFNWB5×6-8L S-N 150 70 1.7 10 13 11 16 ±25
LGAC130N15A LEADSILICON PDFNWB5×6-8L S-N 150 75 3 13 16 ±25
LGAM045N15A LEADSILICON PDFN8*8 S-N 150 300 3 4.5 6.3 ±30
LGLL040N15A LEADSILICON TOLL S-N 150 300 3 4 5.6 ±30
LGLL045N15A LEADSILICON TOLL S-N 150 250 3 4.5 6.3 ±25
LGLL048N15A LEADSILICON TOLL S-N 150 170 3 4.8 5.5 ±25
LGCB080N15A LEADSILICON TO-263-2L S-N 150 180 3 8 9.5 ±20
LGBM045N15A LEADSILICON TO-263-7L S-N 150 250 3 4.5 6.3 ±25