中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC8041GN6 | AF | PDFN5X6-8L | Single P | -40 | -58 | -2.1 | 9 | ±20 | |||
| SSC8041GS1 | AF | SOP-8 | Single P | -40 | -20 | -2.2 | 11 | ±20 | |||
| SSC8041GT8 | AF | TO-252-2L | Single P | -40 | -65 | -1.8 | 8 | ±20 | |||
| SSC8043GN4 | AF | PDFN3.3X3.3-8L | Single P | -40 | -24 | -1.5 | 22 | ±20 | |||
| SSC8043GS1 | AF | SOP-8 | Single P | -40 | -18 | -1.5 | 22 | ±20 | |||
| SSC8043GS6A | AF | SOT-23-3L | Single P | -40 | -7 | -1.5 | 28 | ±20 | |||
| SSC138GS6 | AF | SOT23-6 | Single N | 50 | 0.2 | 1.5 | 2.5 | ±20 | |||
| SSC138GS7 | AF | SOT-323 | Single N | 50 | 0.18 | 1.5 | 0.3 | ±20 | |||
| SSC139GS6 | AF | SOT-23 | Single P | -50 | -0.4 | -1.4 | ±20 | ||||
| SSC139GN1 | AF | DFN1006-3L | Single P | -50 | -0.4 | -1.4 | ±20 | ||||
| SSC8151GS6 | AF | SOT-23 | Single P | -50 | -0.1 | -1.6 | 4.5 | ±20 | |||
| SSC8064GS6 | AF | SOT-23 | Single N | 60 | 3 | 1.4 | 76 | ±20 | |||
| SSC8160GS6 | AF | SOT-23 | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | |||
| SSC8162GS6 | AF | SOT-23 | Single N+ESD | 60 | 0.3 | 1 | 1100 | ±12 | |||
| SSC8164GS6 | AF | SOT-23 | Single N+ESD | 60 | 0.5 | 1 | 1100 | ±20 | |||
| SSC8164GS7 | AF | SOT-323 | Single N+ESD | 60 | 0.44 | 0.95 | 1100 | ±20 | |||
| SSC8164GS8 | AF | SOT-523 | Single N+ESD | 60 | 0.4 | 1 | 1000 | ±20 | |||
| SSC8164GS9 | AF | SOT-723 | Single N+ESD | 60 | 0.3 | 1 | 1000 | ±20 | |||
| SSC7002EGS6 | AF | SOT-23 | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | |||
| SSC7002EGN1 | AF | DFN1006 | Single N+ESD | 60 | 0.35 | 1.6 | 1600 | ±20 |