中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| JBE083M | JJM | TO-263-3L | N | 80 | 199 | 3 | 2.7 | 3.7 | ±20 | ||
| JBE083NS | JJM | TO-263-3L | N | 80 | 133 | 3 | 5.8 | 7.5 | ±20 | ||
| JBE084M | JJM | TO-263-3L | N | 80 | 136 | 3 | 4.1 | 4.9 | ±20 | ||
| JBE101N | JJM | TO-263-3L | N | 100 | 289 | 2.9 | 1.5 | 1.8 | ±20 | ||
| JBE102G | JJM | TO-263-3L | N | 100 | 206 | 2.8 | 2.3 | 2.9 | ±20 | ||
| JBE102T | JJM | TO-263-3L | N | 100 | 240 | 2.9 | 2.2 | 2.6 | ±20 | ||
| JBE102Y | JJM | TO-263-3L | N | 100 | 183 | 3.2 | 3.1 | 3.7 | ±20 | ||
| JBE103T | JJM | TO-263-3L | N | 100 | 184 | 3.1 | 3 | 3.9 | ±20 | ||
| JBE111P | JJM | TO-263-3L | N | 110 | 294 | 3 | 2 | 2.6 | ±20 | ||
| JBE112Q | JJM | TO-263-3L | N | 110 | 220 | 2.9 | 2.2 | 3.1 | ±20 | ||
| JBE112T | JJM | TO-263-3L | N | 110 | 199 | 3 | 2.3 | 3.3 | ±20 | ||
| JBE113P | JJM | TO-263-3L | N | 100 | 175 | 2.9 | 3.2 | 4.1 | ±20 | ||
| JBL083M | JJM | PowerJE®10x12 | N | 80 | 242 | 3.1 | 2.1 | 2.9 | ±20 | ||
| JBL101N | JJM | PowerJE®10x12 | N | 100 | 325 | 2.9 | 1.2 | 1.6 | ±20 | ||
| JBL102E | JJM | PowerJE®10x12 | N | 100 | 246 | 3 | 2 | 2.6 | ±20 | ||
| JBL102T | JJM | PowerJE®10x12 | N | 100 | 272 | 3 | 1.8 | 22 | ±20 | ||
| JBL102Y | JJM | PowerJE®10x12 | N | 100 | 206 | 3 | 2.7 | 3.2 | ±20 | ||
| JBL111P | JJM | PowerJE®10x12 | N | 110 | 256 | 2.9 | 1.6 | 2.2 | ±20 | ||
| JBL112T | JJM | PowerJE®10x12 | N | 110 | 244 | 3 | 1.9 | 2.7 | ±20 | ||
| JBL113P | JJM | PowerJE®10x12 | N | 110 | 196 | 2.8 | 3.3 | 4.2 | ±20 |