中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC7002KGS6 | AF | SOT-23 | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | |||
| SSC7002KGS7 | AF | SOT-323 | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | |||
| SSC7002KGS8 | AF | SOT-523 | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | |||
| SSC8066GN4 | AF | PDFN3.3X3.3-8L | Single N | 60 | 36 | 1.9 | 13 | ±20 | |||
| SSC8066GN6 | AF | PDFN5X6-8L | Single N | 60 | 42 | 1.5 | 13 | ±20 | |||
| SSC8066GT8 | AF | TO252-2L | Single N | 60 | 58 | 1.6 | 12 | ±20 | |||
| SSC8068GN4 | AF | PDFN3.3X3.3-8L | Single N | 60 | 25 | 1.5 | 24 | ±20 | |||
| SSC8068GN6 | AF | PDFN5X6-8L | Single N | 60 | 30 | 1.5 | 23 | ±20 | |||
| SSC8068GT8 | AF | TO-252-2L | Single N | 60 | 32 | 1.7 | 29 | ±20 | |||
| SSC8166GN2 | AF | DFN2020-6L | Single N | 60 | 7 | 1.5 | 32 | ±20 | |||
| SSC8166GN4 | AF | PDFN3.3X3.3-8L | Single N | 60 | 22 | 1.6 | 31 | ±20 | |||
| SSC8L60GN6 | AF | PDFN5X6 | Single N | 60 | 100 | 2 | 3.4 | ±20 | |||
| SSC8L60PN6 | AF | PDFN5X6-8L | Single N | 60 | 160 | 2 | 1.9 | ±20 | |||
| SSC8L60GT8 | AF | TO-252-2L | Single N | 60 | 120 | 2 | 3 | ±20 | |||
| SSC8L62GN6 | AF | PDFN5X6 | Single N | 60 | 60 | 1.8 | 8 | ±20 | |||
| SSC8L62GT8 | AF | TO252-2L | Single N | 60 | 70 | 1.8 | 8 | ±20 | |||
| SSC8L620GT8 | AF | TO252-2L | Single N | 60 | 134 | 1.6 | 3.9 | ±20 | |||
| SSC8L62GS3 | AF | SOT-89-3L | Single N | 60 | 59 | 1.8 | 9.2 | ±20 | |||
| SSC8L64GN6 | AF | PDFN5X6 | Single N | 60 | 90 | 1.9 | 4.4 | ±20 | |||
| SSC8L612PN6 | AF | PDFN5X6-8L | Single N | 60 | 160 | 3 | 2.2 | ±20 |