中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RS100N210S | REASUNOS | TO-263 | N | 100 | 210 | 1.9 | 2.4 | ||||
| RS110N200T | REASUNOS | TO-220 | N | 110 | 198 | 3.4 | 4 | ||||
| RS110N200S | REASUNOS | TO-263 | N | 110 | 198 | 3.4 | 4 | ||||
| RS100N300I | REASUNOS | TOLL | N | 100 | 300 | 1.7 | 2.2 | ||||
| RS100N60G | REASUNOS | DFN5*6 | N | 100 | 60 | 7.2 | 8 | ||||
| RS100N60HG | REASUNOS | DFN5*6 | N | 100 | 60 | 7.2 | 8 | ||||
| RS100N85G | REASUNOS | DFN5*6 | N | 100 | 85 | 5.8 | 6.5 | ||||
| RS100N85HG | REASUNOS | DFN5*6 | N | 100 | 85 | 5.8 | 6.5 | ||||
| RS100N125G | REASUNOS | DFN5*6 | N | 100 | 125 | 4 | 4.6 | ||||
| RS100N125HG | REASUNOS | DFN5*6 | N | 100 | 125 | 4 | 4.6 | ||||
| RS100N150G | REASUNOS | DFN5*6 | N | 100 | 150 | 3.5 | 4 | ||||
| RS150N105T | REASUNOS | TO-220 | N | 150 | 105 | 9.8 | 11 | ||||
| RS150N105S | REASUNOS | TO-263 | N | 150 | 105 | 9.8 | 11 | ||||
| RS630D | REASUNOS | TO-252 | N | 200 | 9 | 250 | 300 | ||||
| RS630T | REASUNOS | TO-220 | N | 200 | 9 | 250 | 300 | ||||
| RS640D | REASUNOS | TO-252 | N | 200 | 18 | 120 | 150 | ||||
| RS640T | REASUNOS | TO-220 | N | 200 | 18 | 120 | 150 | ||||
| RS40N20T | REASUNOS | TO-220 | N | 200 | 40 | 50 | 60 | ||||
| RS40N20W | REASUNOS | TO-247 | N | 200 | 40 | 50 | 60 | ||||
| RS76N20T | REASUNOS | TO-220 | N | 200 | 76 | 17 | 20 |