主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LGCB029N10A LEADSILICON S-N 100 170 1.5 2.8 3.5 3.5 4.7 ±20 TO-263-2L
LGCB037N10A LEADSILICON S-N 100 160 3 3.7 4.2 ±25 TO-263-2L
LGCB055N15A LEADSILICON S-N 100 110 3 5.5 7 ±20 TO-263-2L
LGBM009N10A LEADSILICON S-N 100 300 3 0.9 1.26 ±20 TO-263-7L
LGBM011N10A LEADSILICON S-N 100 300 3 1.1 1.5 ±20 TO-263-7L
LGBM018N10A LEADSILICON S-N 100 500 3 1.8 2.5 ±20 TO-263-7L
LGBM017N10A LEADSILICON S-N 100 250 3 2 2.5 ±20 TO-263-7L
LGDQ950N10DA LEADSILICON D-N 100 3.5 1.6 95 130 135 190 ±20 SOP8
LGAC350P10A LEADSILICON S-P -100 -30 -2 35 50 45 65 ±20 PDFNWB5×6-8L
LM1U400P10A LEADSILICON S-P -100 -32 -1.8 40 50 42 55 ±20 TO-252-2L
LM1U480P10A LEADSILICON S-P -100 -30 -2 48 55 55 62 ±20 TO-252-2L
LM1U860P10A LEADSILICON S-P -100 -16 -1.8 86 110 90 120 ±20 TO-252-2L
LM1U2K8P10A LEADSILICON S-P -100 -7 -1.8 280 360 300 400 ±20 TO-252-2L
LMCB400P10A LEADSILICON S-P -100 -32 -1.8 40 50 42 55 ±20 TO-263-2L
LM1K3P10A LEADSILICON S-P -100 -3 280 360 300 400 ±20 SOT-23-3L
LMDQ950C10A LEADSILICON N+P 100-100 4.0-5.0 1.5--1.5 95-90 110-110 100-100 120-120 ±20-±20 SOP8
LM1Q850C10A LEADSILICON N+P 100-100 4-2.8 1.8--2 85-220 100-260 90-230 130-290 ±20-±20 SOP8
LGAC048N12A LEADSILICON S-N 120 150 3 4.8 6.7 ±25 PDFNWB5×6-8L
LGAC051N12A LEADSILICON S-N 120 110 1.5 5.1 6.2 6.7 8 ±20 PDFNWB5×6-8L
LGAC100N12A LEADSILICON S-N 120 60 1.5 10 13 14 17 ±20 PDFNWB5×6-8L
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