主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LGAC064N10A LEADSILICON S-N 100 80 1.5 6.4 7.7 8 10 ±20 PDFNWB5×6-8L
LGAC075N10A LEADSILICON S-N 100 75 1.5 7 8.5 9.5 13 ±20 PDFNWB5×6-8L
LGAC080N10A LEADSILICON S-N 100 65 2 8 9.5 10.5 14 ±20 PDFNWB5×6-8L
LGAC125N10A LEADSILICON S-N 100 40 2 12 15 16 22 ±20 PDFNWB5×6-8L
LGAC200N10A LEADSILICON S-N 100 25 1.8 20 24 25 30 ±20 PDFNWB5×6-8L
LGAM014N10A LEADSILICON S-N 100 500 3 1.4 2 ±20 PDFN8*8
LGLL009N10A LEADSILICON S-N 100 300 3 0.9 1.26 ±20 TOLL
LGLL011N10A LEADSILICON S-N 100 385 3 1.1 1.5 ±20 TOLL
LGLL013N10A LEADSILICON S-N 100 500 3 1.3 1.8 ±20 TOLL
LGLL017N10A LEADSILICON S-N 100 300 3 1.6 2.2 ±20 TOLL
LGLL020N10A LEADSILICON S-N 100 500 3 2 2.8 ±20 TOLL
LG1U068N10A LEADSILICON S-N 100 90 1.5 6.8 8 7.8 11.4 ±20 TO-252-2L
LG1U080N10A LEADSILICON S-N 100 65 2 8 9.5 10.5 14 ±20 TO-252-2L
LG1U100N10A LEADSILICON S-N 100 53 2 9 14 12.5 18 ±20 TO-252-2L
LG1U125N10A LEADSILICON S-N 100 40 1.8 12.5 15 17 22 ±20 TO-252-2L
LG1P030N10A LEADSILICON S-N 100 195 3 3 3.5 ±20 TO-220C
LG2P034N10A LEADSILICON S-N 100 160 3 3.7 4.2 ±20 TO-220C
LG1P037N10A LEADSILICON S-N 100 160 3 3.7 5 ±25 TO-220C
LG2P042N10A LEADSILICON S-N 100 120 3 4.2 5.1 ±20 TO-220C
LG2P044N10A LEADSILICON S-N 100 115 3 4.6 5.5 ±20 TO-220C
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