主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LGAC030N04A LEADSILICON S-N 40 100 1.7 3 3.6 3.5 5.5 ±20 PDFNWB5×6-8L
LGAC030N04B LEADSILICON S-N 40 100 1.7 3 3.6 3.5 5.5 ±20 PDFNWB5×6-8L
LGAC030N04C LEADSILICON S-N 40 110 1.5 2.8 3.5 4 5 ±20 PDFNWB5×6-8L
LGAC040N04A LEADSILICON S-N 40 76 1.8 4 5.5 6 7.8 ±20 PDFNWB5×6-8L
LGAM004N04A LEADSILICON S-N 40 500 1.6 0.4 0.56 0.8 1.2 ±20 PDFN8*8
LGAM005N04A LEADSILICON S-N 40 500 1.6 0.5 0.7 1 1.5 ±20 PDFN8*8
LGLL004N04A LEADSILICON S-N 40 500 1.6 0.4 0.56 0.8 1.2 ±20 TOLL
LGLL005N04A LEADSILICON S-N 40 400 1.6 0.5 0.7 1 1.5 ±20 TOLL
LGLL006N04A LEADSILICON S-N 40 300 1.6 0.55 0.77 1.2 1.8 ±20 TOLL
LGLL008N04A LEADSILICON S-N 40 300 1.6 0.8 1.12 1.5 2.3 ±20 TOLL
LGLL008N04B LEADSILICON S-N 40 300 3 0.8 1.12 ±20 TOLL
LGLL012N04A LEADSILICON S-N 40 250 1.6 1.2 1.7 1.9 2.9 ±20 TOLL
LGSL004N04A LEADSILICON S-N 40 300 1.6 0.4 0.56 0.8 1.2 ±20 sTOLL
LG1U018N04A LEADSILICON S-N 40 130 1.8 1.8 2.2 2.4 3.4 ±20 TO-252-2L
LGBM008N04A LEADSILICON S-N 40 300 1.6 0.8 1.12 1.5 2.3 ±20 TO-263-7L
LGBM008N04B LEADSILICON S-N 40 300 3 0.8 1.12 ±20 TO-263-7L
LMBT500P04A LEADSILICON S-P -40 -7 -1.7 50 60 60 80 ±20 SOT-89-3L
LM1Q110P04A LEADSILICON S-P -40 -13 -1.5 14 17 17 22 ±20 SOP8
LM1Q150P04A LEADSILICON S-P -40 -10 -1.5 15 20 19 25 ±20 SOP8
LM1Q300P04A LEADSILICON S-P -40 -24 -1.7 30 40 40 55 ±20 SOP8
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