主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LMAB070N06A LEADSILICON S-N 60 50 1.8 7 9 8 11 ±20 PDFNWB3.3×3.3-8L
LMAB130N06A LEADSILICON S-N 60 35 1.7 13 16 16 25 ±20 PDFNWB3.3×3.3-8L
LMAB240N06A LEADSILICON S-N 60 20 1.5 24 30 28 40 ±20 PDFNWB3.3×3.3-8L
LMAC030N06A LEADSILICON S-N 60 150 3 3 4 ±20 PDFNWB5×6-8L
LMAC043N06A LEADSILICON S-N 60 120 3 4.2 6 ±20 PDFNWB5×6-8L
LMAC060N06A LEADSILICON S-N 60 80 1.6 6 8 7 9.5 ±20 PDFNWB5×6-8L
LMAC070N06A LEADSILICON S-N 60 70 1.8 7 9 8 11 ±20 PDFNWB5×6-8L
LMAC090N06A LEADSILICON S-N 60 70 1.5 9 15 15 21 ±20 PDFNWB5×6-8L
LMAC120N06A LEADSILICON S-N 60 50 1.7 13 16 16 25 ±20 PDFNWB5×6-8L
LMAC240N06A LEADSILICON S-N 60 20 1.5 24 30 28 40 ±20 PDFNWB5×6-8L
LM1U030N06A LEADSILICON S-N 60 150 3 3 4 ±20 TO-252-2L
LM1U043N06A LEADSILICON S-N 60 120 3 4.2 6 ±20 TO-252-2L
LM1U060N06A LEADSILICON S-N 60 80 1.6 6 8 7 9.5 ±20 TO-252-2L
LM1U130N06A LEADSILICON S-N 60 50 1.7 13 16 16 25 ±20 TO-252-2L
LM1U240N06A LEADSILICON S-N 60 20 1.5 24 30 28 40 ±20 TO-252-2L
LM1U260N06A LEADSILICON S-N 60 15 1.6 26 34 31 41 ±20 TO-252-2L
LM1U800N06A LEADSILICON S-N 60 3 1.3 80 100 90 120 ±20 TO-252-2L
LM1P030N06A LEADSILICON S-N 60 180 3 3.5 4.5 ±20 TO-220C
LM1P043N06A LEADSILICON S-N 60 120 3 4.3 6 ±20 TO-220C
LM1P060N06A LEADSILICON S-N 60 80 1.6 6 8 7 9.5 ±20 TO-220C
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