主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LG2P090N20A LEADSILICON S-N 200 110 3 9.3 10.5 ±20 TO-220C
LGLL080N20A LEADSILICON S-N 200 200 3 8 11 ±25 TOLL
LGAC180N20A LEADSILICON S-N 200 75 3.5 18 22 ±20 TO-263-7L
LM1Q042N04A LEADSILICON S-N 40 18 1.5 4.5 6 6.5 10 ±20 SOP8
LM1Q055N04A LEADSILICON S-N 40 15 1.5 6 9 8 13 ±20 SOP8
LM1Q075N04A LEADSILICON S-N 40 12 1.5 9 12 11 18 ±20 SOP8
LM1Q170N04A LEADSILICON S-N 40 7 1.5 17 24 21 40 ±20 SOP8
LMAB042N04A LEADSILICON S-N 40 70 1.5 4.2 5.5 6 9 ±20 PDFNWB3.3×3.3-8L
LMAB055N04A LEADSILICON S-N 40 42 1.5 5.5 7.5 7.2 11 ±20 PDFNWB3.3×3.3-8L
LMAB060N04A LEADSILICON S-N 40 40 1.6 6 8 9 12 ±20 PDFNWB3.3×3.3-8L
LMAB075N04A LEADSILICON S-N 40 35 1.5 7 10 9 16 ±20 PDFNWB3.3×3.3-8L
LMAC022N04A LEADSILICON S-N 40 130 1.7 2.2 3 3.3 4.5 ±20 PDFNWB5×6-8L
LMAC025N04A LEADSILICON S-N 40 130 1.5 2.5 3.3 3.2 4.6 ±20 PDFNWB5×6-8L
LMAC027N04A LEADSILICON S-N 40 120 1.5 2.3 3.3 3.2 4.5 ±20 PDFNWB5×6-8L
LMAC042N04A LEADSILICON S-N 40 80 1.5 4.2 5.5 6 9 ±20 PDFNWB5×6-8L
LMAC055N04A LEADSILICON S-N 40 60 1.5 5.5 7.5 7.2 11 ±20 PDFNWB5×6-8L
LMAC075N04A LEADSILICON S-N 40 50 1.5 7 10 9 16 ±20 PDFNWB5×6-8L
LMLL009N04A LEADSILICON S-N 40 300 1.6 0.85 1.19 1.38 2.1 ±20 TOLL
LMLL014N04A LEADSILICON S-N 40 250 1.6 1.4 2 2 3 ±20 TOLL
LM1U025N04A LEADSILICON S-N 40 130 1.5 2.5 3.3 3.2 4.6 ±20 TO-252-2L
111