主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LM1U035N04A LEADSILICON S-N 40 90 1.5 3.5 4.8 4.8 6.6 ±20 TO-252-2L
LM1U042N04A LEADSILICON S-N 40 80 1.5 4.2 5.5 6 9 ±20 TO-252-2L
LM1U042N04B LEADSILICON S-N 40 80 1.5 4.2 5.5 6 9 ±20 TO-252-2L
LM1U055N04A LEADSILICON S-N 40 60 1.5 5.5 7.5 7.2 11 ±20 TO-252-2L
LM1U075N04A LEADSILICON S-N 40 50 1.5 7 10 9 16 ±20 TO-252-2L
LM1U100N04A LEADSILICON S-N 40 40 1.5 10.5 14 14 23 ±20 TO-252-2L
LM1U120N04A LEADSILICON S-N 40 35 1.5 12 16 16 22 ±20 TO-252-2L
LM1U170N04A LEADSILICON S-N 40 15 1.5 17 24 21 40 ±20 TO-252-2L
LM1P025N04A LEADSILICON S-N 40 150 1.5 2.5 3.3 3.2 4.6 ±20 TO-220C
LM1P042N04A LEADSILICON S-N 40 80 1.5 4.2 5.5 6 9 ±20 TO-220C
LM1P055N04A LEADSILICON S-N 40 60 1.5 5.5 7.5 7.2 11 ±20 TO-220C
LMBM005N04A LEADSILICON S-N 40 400 1.6 0.5 0.7 0.95 1.5 ±20 TO-263-7L
LMBM009N04A LEADSILICON S-N 40 400 1.6 0.9 1.26 1.4 2.1 ±20 TO-263-7L
LMBM010N04A LEADSILICON S-N 40 300 1.6 1 1.4 1.8 2.7 ±20 TO-263-7L
LGAB012N04A LEADSILICON S-N 40 100 1.6 1.2 1.7 2.3 3.5 ±20 PDFNWB3.3×3.3-8L
LGAC005N04A LEADSILICON S-N 40 200 1.6 0.5 0.7 0.7 1.1 ±20 PDFNWB5×6-8L
LGAC006N04A LEADSILICON S-N 40 200 1.6 0.55 0.77 0.85 1.3 ±20 PDFNWB5×6-8L
LGAC009N04A LEADSILICON S-N 40 200 3 0.85 1.19 ±20 PDFNWB5×6-8L
LGAC011N04A LEADSILICON S-N 40 215 1.6 1.1 1.5 1.4 2.2 ±20 PDFNWB5×6-8L
LGAC016N04A LEADSILICON S-N 40 130 1.8 1.6 2 2.3 3.3 ±20 PDFNWB5×6-8L
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