主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LM1Q500P04A LEADSILICON S-P -40 -7 -1.7 50 60 60 80 ±20 SOP8
LMAB100P04A LEADSILICON S-P -40 -33 -1.7 10 14 14 18 ±20 PDFNWB3.3×3.3-8L
LMAB110P04A LEADSILICON S-P -40 -30 -1.5 11 15 14.5 20 ±20 PDFNWB3.3×3.3-8L
LMAB150P04A LEADSILICON S-P -40 -25 -1.5 15 20 19 25 ±20 PDFNWB3.3×3.3-8L
LMAC100P04A LEADSILICON S-P -40 -44 -1.7 10 14 14 18 ±20 PDFNWB5×6-8L
LMAC110P04A LEADSILICON S-P -40 -40 -1.5 11 15 14.5 20 ±20 PDFNWB5×6-8L
LMAC150P04A LEADSILICON S-P -40 -30 -1.5 15 20 19 25 ±20 PDFNWB5×6-8L
LM1U100P04A LEADSILICON S-P -40 -44 -1.7 10 14 14 18 ±20 TO-252-2L
LM1U110P04A LEADSILICON S-P -40 -40 -1.5 11 15 14.5 20 ±20 TO-252-2L
LM1U150P04A LEADSILICON S-P -40 -35 -1.5 15 20 19 25 ±20 TO-252-2L
LM1U260P04A LEADSILICON S-P -40 -25 -1.6 26 35 33 45 ±20 TO-252-2L
LM1U300P04A LEADSILICON S-P -40 -24 -1.7 30 40 40 55 ±20 TO-252-2L
LMAE055C04A LEADSILICON N+P 40--30 60--70 1.5--1.5 5.5-6 7.5-8 7.2-8.5 11.0-12 ±20-±20 PDFNWB5×6-8L-A
LMBD170C04A LEADSILICON N+P 40--40 13--10 1.5--1.5 17-40 24-50 21-50 40-65 ±20-±20 PDFNWB3.3×3.3-8L-B
LMAE170C04A LEADSILICON N+P 40--40 13--10 1.5--1.5 17-40 24-50 21-50 40-65 ±20-±20 PDFNWB5×6-8L-A
LMDU075C04A LEADSILICON N+P 40--40 50--40 1.5--1.5 7.0-11 10.0-15 9-14.5 16-20 ±20-±20 TO-252-4L
LMDU170C04A LEADSILICON N+P 40--40 13--10 1.5--1.5 17-40 24-50 21-50 40-65 ±20-±20 TO-252-4L
BSS138 LEADSILICON S-N 50 0.22 1.1 700 1200 780 1500 ±20 SOT-23
BSS138KA LEADSILICON S-N 50 0.34 1.1 900 2500 1000 3000 ±20 SOT-23
LM1W138 LEADSILICON S-N 50 0.22 1.1 700 1200 780 1500 ±20 SOT-323
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