LEADSILICON 中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号:275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LGLL016N12A LEADSILICON S-N 120 300 3 1.6 2.2 ±25 TOLL
LGCB048N12A LEADSILICON S-N 120 180 3 4.8 6.2 ±20 TO-263-2L
LGBM020N12A LEADSILICON S-N 120 250 3 2 2.3 2.4 3 ±25 TO-263-7L
LGBM020N12B LEADSILICON S-N 120 250 3.5 2 2.5 ±25 TO-263-7L
LGBM048N12A LEADSILICON S-N 120 250 3 4.8 6.7 ±25 TO-263-7L
LM2E2305B LEADSILICON S-P -15 -6 -0.62 22 31 ±10 SOT-23
LMBN135P02A LEADSILICON S-P -15 -11 -0.75 13.5 18 ±12 DFN2020-6L
LM2E2333 LEADSILICON S-P -15 -7 -0.62 18 28 ±10 SOT-23
LM1K2N15A LEADSILICON S-N 150 2 2 225 270 ±20 SOT-23
LGAC100N15A LEADSILICON S-N 150 70 1.7 10 13 11 16 ±25 PDFNWB5×6-8L
LGAC130N15A LEADSILICON S-N 150 75 3 13 16 ±25 PDFNWB5×6-8L
LGAM045N15A LEADSILICON S-N 150 300 3 4.5 6.3 ±30 PDFN8*8
LGLL040N15A LEADSILICON S-N 150 300 3 4 5.6 ±30 TOLL
LGLL045N15A LEADSILICON S-N 150 250 3 4.5 6.3 ±25 TOLL
LGLL048N15A LEADSILICON S-N 150 170 3 4.8 5.5 ±25 TOLL
LGCB080N15A LEADSILICON S-N 150 180 3 8 9.5 ±20 TO-263-2L
LGBM045N15A LEADSILICON S-N 150 250 3 4.5 6.3 ±25 TO-263-7L
LM1K5K0N20A LEADSILICON S-N 150 2 500 600 ±20 SOT-23-3L
LM1U2K2N20A LEADSILICON S-N 200 9 1.5 220 300 ±30 TO-252-2L
LGBM080N20A LEADSILICON S-N 200 200 3 8 11 ±25 PDFNWB5×6-8L
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