主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
-
ID_Max /A
-
VGS(th)Typ/V
-
RDS(ON)Typ (mΩ)@VGS 10V
-
RDS(ON)Max (mΩ)@VGS 10V
-
RDS(ON)Typ (mΩ)@VGS 4.5V
-
RDS(ON)Max (mΩ)@VGS 4.5V
-
VGS_Max/V
-
可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LM1K5K0N20A LEADSILICON SOT-23-3L S-N 150 2 500 600 ±20
LM1U2K2N20A LEADSILICON TO-252-2L S-N 200 9 1.5 220 300 ±30
LGBM080N20A LEADSILICON PDFNWB5×6-8L S-N 200 200 3 8 11 ±25
LG2P090N20A LEADSILICON TO-220C S-N 200 110 3 9.3 10.5 ±20
LGLL080N20A LEADSILICON TOLL S-N 200 200 3 8 11 ±25
LGAC180N20A LEADSILICON TO-263-7L S-N 200 75 3.5 18 22 ±20
LM1Q042N04A LEADSILICON SOP8 S-N 40 18 1.5 4.5 6 6.5 10 ±20
LM1Q055N04A LEADSILICON SOP8 S-N 40 15 1.5 6 9 8 13 ±20
LM1Q075N04A LEADSILICON SOP8 S-N 40 12 1.5 9 12 11 18 ±20
LM1Q170N04A LEADSILICON SOP8 S-N 40 7 1.5 17 24 21 40 ±20
LMAB042N04A LEADSILICON PDFNWB3.3×3.3-8L S-N 40 70 1.5 4.2 5.5 6 9 ±20
LMAB055N04A LEADSILICON PDFNWB3.3×3.3-8L S-N 40 42 1.5 5.5 7.5 7.2 11 ±20
LMAB060N04A LEADSILICON PDFNWB3.3×3.3-8L S-N 40 40 1.6 6 8 9 12 ±20
LMAB075N04A LEADSILICON PDFNWB3.3×3.3-8L S-N 40 35 1.5 7 10 9 16 ±20
LMAC022N04A LEADSILICON PDFNWB5×6-8L S-N 40 130 1.7 2.2 3 3.3 4.5 ±20
LMAC025N04A LEADSILICON PDFNWB5×6-8L S-N 40 130 1.5 2.5 3.3 3.2 4.6 ±20
LMAC027N04A LEADSILICON PDFNWB5×6-8L S-N 40 120 1.5 2.3 3.3 3.2 4.5 ±20
LMAC042N04A LEADSILICON PDFNWB5×6-8L S-N 40 80 1.5 4.2 5.5 6 9 ±20
LMAC055N04A LEADSILICON PDFNWB5×6-8L S-N 40 60 1.5 5.5 7.5 7.2 11 ±20
LMAC075N04A LEADSILICON PDFNWB5×6-8L S-N 40 50 1.5 7 10 9 16 ±20