主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LG1P020N06A LEADSILICON S-N 60 150 1.7 2 3 ±20 TO-220C
LGBM005N06A LEADSILICON S-N 60 300 3 0.5 0.7 ±20 TO-263-7L
LGBM011N06A LEADSILICON S-N 60 300 3 1.1 1.5 2.5 3.8 ±20 TO-263-7L
LMDW7002 LEADSILICON D-N 60 0.1 1.5 1600 3500 2000 5000 ±20 SOT-363
LMDW138K LEADSILICON D-N 60 0.3 1.1 1000 2500 1200 3000 ±20 SOT-363
LMDX7002 LEADSILICON D-N 60 0.1 1.5 1600 3500 2000 5000 ±20 SOT-563
LMAH6003DA LEADSILICON D-N 60 3 1.5 75 100 85 120 ±20 SOT-23-6L
LM1Q800N06DA LEADSILICON D-N 60 3 1.3 80 100 90 120 ±20 SOP8
LGAB120N06DA LEADSILICON D-N 60 25 1.7 13 17 17 25 ±20 PDFNWB3.3×3.3-8L-B
LM1K260N06A LEADSILICON S-N 60 5.8 28 38 34 50 ±10 SOT-23-3L
2N7002KT LEADSILICON N 60 0.3 1.5 1.9 2.5 2.0 3.0 ±20 SOT-523
BSS84K LEADSILICON S-P -60 -0.18 -1.6 4000 5000 4500 6000 ±20 SOT-23
LM2E2309A LEADSILICON S-P -60 -1.25 -1.6 160 185 180 215 ±20 SOT-23
LM2E2309B LEADSILICON S-P -60 -1.6 -1.8 120 160 160 200 ±20 SOT-23
LM1K800P06A LEADSILICON S-P -60 -5 -1.8 85 100 100 130 ±20 SOT-23-3L
LM1T800P60A LEADSILICON S-P -60 -5 -1.8 85 100 100 130 ±20 SOT-223
LM1Q250P06A LEADSILICON S-P -60 -8 -1.6 25 32 30 40 ±20 SOP8
LM1Q800P06A LEADSILICON S-P -60 -4.5 -1.8 70 90 85 110 ±20 SOP8
LMAB240P06A LEADSILICON S-P -60 -25 -1.6 24 28 27 32 ±20 PDFNWB3.3×3.3-8L
LMAB250P06A LEADSILICON S-P -60 -23 -1.6 25 30 30 40 ±20 PDFNWB3.3×3.3-8L
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