主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
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ID_Max /A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS 4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LG1U017N06A LEADSILICON TO-252-2L S-N 60 180 1.6 1.9 2.5 2.5 3.4 ±20
LG1U026N06A LEADSILICON TO-252-2L S-N 60 120 1.8 2.7 3.5 3.5 4.5 ±20
LG1U080N06A LEADSILICON TO-252-2L S-N 60 55 1.7 8 11 11 15 ±20
LG1P020N06A LEADSILICON TO-220C S-N 60 150 1.7 2 3 ±20
LGBM005N06A LEADSILICON TO-263-7L S-N 60 300 3 0.5 0.7 ±20
LGBM011N06A LEADSILICON TO-263-7L S-N 60 300 3 1.1 1.5 2.5 3.8 ±20
LMDW7002 LEADSILICON SOT-363 D-N 60 0.1 1.5 1600 3500 2000 5000 ±20
LMDW138K LEADSILICON SOT-363 D-N 60 0.3 1.1 1000 2500 1200 3000 ±20
LMDX7002 LEADSILICON SOT-563 D-N 60 0.1 1.5 1600 3500 2000 5000 ±20
LMAH6003DA LEADSILICON SOT-23-6L D-N 60 3 1.5 75 100 85 120 ±20
LM1Q800N06DA LEADSILICON SOP8 D-N 60 3 1.3 80 100 90 120 ±20
LGAB120N06DA LEADSILICON PDFNWB3.3×3.3-8L-B D-N 60 25 1.7 13 17 17 25 ±20
LM1K260N06A LEADSILICON SOT-23-3L S-N 60 5.8 28 38 34 50 ±10
2N7002KT LEADSILICON SOT-523 N 60 0.3 1.5 1.9 2.5 2.0 3.0 ±20
BSS84K LEADSILICON SOT-23 S-P -60 -0.18 -1.6 4000 5000 4500 6000 ±20
LM2E2309A LEADSILICON SOT-23 S-P -60 -1.25 -1.6 160 185 180 215 ±20
LM2E2309B LEADSILICON SOT-23 S-P -60 -1.6 -1.8 120 160 160 200 ±20
LM1K800P06A LEADSILICON SOT-23-3L S-P -60 -5 -1.8 85 100 100 130 ±20
LM1T800P60A LEADSILICON SOT-223 S-P -60 -5 -1.8 85 100 100 130 ±20
LM1Q250P06A LEADSILICON SOP8 S-P -60 -8 -1.6 25 32 30 40 ±20