主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
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ID_Max /A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS 4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LM1T6005A LEADSILICON SOT-223 S-N 60 5 1.6 28 35 32 40 ±20
LM1Q130N06A LEADSILICON SOP8 S-N 60 10 1.7 13 18 16 30 ±20
LM1Q240N06A LEADSILICON SOP8 S-N 60 8 1.5 24 35 28 45 ±20
LMAB070N06A LEADSILICON PDFNWB3.3×3.3-8L S-N 60 50 1.8 7 9 8 11 ±20
LMAB130N06A LEADSILICON PDFNWB3.3×3.3-8L S-N 60 35 1.7 13 16 16 25 ±20
LMAB240N06A LEADSILICON PDFNWB3.3×3.3-8L S-N 60 20 1.5 24 30 28 40 ±20
LMAC030N06A LEADSILICON PDFNWB5×6-8L S-N 60 150 3 3 4 ±20
LMAC043N06A LEADSILICON PDFNWB5×6-8L S-N 60 120 3 4.2 6 ±20
LMAC060N06A LEADSILICON PDFNWB5×6-8L S-N 60 80 1.6 6 8 7 9.5 ±20
LMAC070N06A LEADSILICON PDFNWB5×6-8L S-N 60 70 1.8 7 9 8 11 ±20
LMAC090N06A LEADSILICON PDFNWB5×6-8L S-N 60 70 1.5 9 15 15 21 ±20
LMAC120N06A LEADSILICON PDFNWB5×6-8L S-N 60 50 1.7 13 16 16 25 ±20
LMAC240N06A LEADSILICON PDFNWB5×6-8L S-N 60 20 1.5 24 30 28 40 ±20
LM1U030N06A LEADSILICON TO-252-2L S-N 60 150 3 3 4 ±20
LM1U043N06A LEADSILICON TO-252-2L S-N 60 120 3 4.2 6 ±20
LM1U060N06A LEADSILICON TO-252-2L S-N 60 80 1.6 6 8 7 9.5 ±20
LM1U130N06A LEADSILICON TO-252-2L S-N 60 50 1.7 13 16 16 25 ±20
LM1U240N06A LEADSILICON TO-252-2L S-N 60 20 1.5 24 30 28 40 ±20
LM1U260N06A LEADSILICON TO-252-2L S-N 60 15 1.6 26 34 31 41 ±20
LM1U800N06A LEADSILICON TO-252-2L S-N 60 3 1.3 80 100 90 120 ±20