主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
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ID_Max /A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS 4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LM1Q800P06A LEADSILICON SOP8 S-P -60 -4.5 -1.8 70 90 85 110 ±20
LMAB240P06A LEADSILICON PDFNWB3.3×3.3-8L S-P -60 -25 -1.6 24 28 27 32 ±20
LMAB250P06A LEADSILICON PDFNWB3.3×3.3-8L S-P -60 -23 -1.6 25 30 30 40 ±20
LMAC075P06A LEADSILICON PDFNWB5×6-8L S-P -60 -85 -1.7 7.5 10 9 13 ±20
LMAC120P06A LEADSILICON PDFNWB5×6-8L S-P -60 -70 -1.8 12 15 14 20 ±20
LMAC250P06A LEADSILICON PDFNWB5×6-8L S-P -60 -40 -1.6 25 30 30 40 ±20
LM1U160P06A LEADSILICON TO-252-2L S-P -60 -80 -1.6 16 20 19 25 ±20
LM1U240P06A LEADSILICON TO-252-2L S-P -60 -50 -1.6 24 28 27 32 ±20
LM1U250P06A LEADSILICON TO-252-2L S-P -60 -40 -1.6 25 30 30 40 ±20
LM1U280P06A LEADSILICON TO-252-2L S-P -60 -30 -1.6 28 33 31 36 ±20
LM1U800P60A LEADSILICON TO-252-2L S-P -60 -14 -1.8 80 100 95 130 ±20
LM1P240P06A LEADSILICON TO-220C S-P -60 -50 -1.6 24 28 27 32 ±20
LM2E2309 LEADSILICON SOT-23 P -60 -3 -1.8 120 160 160 200 ±20
LMDW7252KA LEADSILICON SOT-363 N+P 60--50 0.34--0.18 1.6--1.6 1600-3500 1900-5000 1700-3800 2200-6000 ±20-±20
LMDU260C06A LEADSILICON TO-252-4L N+P 60--60 20--14 1.6--1.8 26-80 34-100 31-95 41-120 ±20-±20
LMAC044N06A LEADSILICON PDFNWB5×6-8L S-N 65 87 3 4.4 5.7 ±20
LM2P065N07A LEADSILICON TO-220C S-N 68 80 3 6.5 8.5 ±20
LMLL025N08A LEADSILICON TOLL S-N 80 300 3 2.5 3.5 ±20
LMBM025N08A LEADSILICON TO-263-7L S-N 80 300 3 2.5 3.5 ±20
LGAM007N08A LEADSILICON PDFN8*8 S-N 80 500 3 0.7 0.98 2.5 3.8 ±20