主页产品 MOSFET 中压MOSFET

中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

制造商
VDS_Max/V
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ID_Max /A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS 4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用中压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LM1P030N06A LEADSILICON TO-220C S-N 60 180 3 3.5 4.5 ±20
LM1P043N06A LEADSILICON TO-220C S-N 60 120 3 4.3 6 ±20
LM1P060N06A LEADSILICON TO-220C S-N 60 80 1.6 6 8 7 9.5 ±20
LM1P130N06A LEADSILICON TO-220C S-N 60 50 1.7 13 16 16 25 ±20
LMCB030N06A LEADSILICON TO-263-2L S-N 60 180 3 3 4 ±20
LMTN060N06A LEADSILICON TO-247 S-N 60 80 1.6 6 8 7 9.5 ±20
LMTN070N06A LEADSILICON TO-247 S-N 60 72 1.8 7 9 8 11 ±20
LGAB050N06B LEADSILICON PDFNWB3.3×3.3-8L S-N 60 65 2.5 5.5 7.6 ±20
LGAB080N06A LEADSILICON PDFNWB3.3×3.3-8L S-N 60 40 1.6 8 12 11 15 ±20
LGAB090N06A LEADSILICON PDFNWB3.3×3.3-8L S-N 60 35 1.6 9 13 12 18 ±20
LGAC010N06A LEADSILICON PDFNWB5×6-8L S-N 60 220 2 1 1.4 1.5 2.2 ±20
LGAC016N06A LEADSILICON PDFNWB5×6-8L S-N 60 150 3 1.6 2.2 ±20
LGAC017N06A LEADSILICON PDFNWB5×6-8L S-N 60 180 1.6 1.7 2.2 2.4 3.2 ±20
LGAC020N06A LEADSILICON PDFNWB5×6-8L S-N 60 150 1.7 2 3 ±20
LGAC026N06A LEADSILICON PDFNWB5×6-8L S-N 60 120 1.8 2.6 3.3 3.4 4.4 ±20
LGAC060N06A LEADSILICON PDFNWB5×6-8L S-N 60 80 3 6 7 ±20
LGAM006N06A LEADSILICON PDFN8*8 S-N 60 500 3 0.6 0.84 1.8 2.7 ±20
LGLL005N06A LEADSILICON TOLL S-N 60 300 3 0.5 0.7 ±20
LGLL008N06A LEADSILICON TOLL S-N 60 400 1.6 0.8 1.12 1.8 2.7 ±20
LGLL011N06A LEADSILICON TOLL S-N 60 300 1.7 1.1 1.5 2.5 3.8 ±20