中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LGAC009N04A | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 200 | 3 | 0.85 | 1.19 | ±20 | ||
| LGAC011N04A | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 215 | 1.6 | 1.1 | 1.5 | 1.4 | 2.2 | ±20 |
| LGAC016N04A | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 130 | 1.8 | 1.6 | 2 | 2.3 | 3.3 | ±20 |
| LGAC030N04A | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 100 | 1.7 | 3 | 3.6 | 3.5 | 5.5 | ±20 |
| LGAC030N04B | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 100 | 1.7 | 3 | 3.6 | 3.5 | 5.5 | ±20 |
| LGAC030N04C | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 110 | 1.5 | 2.8 | 3.5 | 4 | 5 | ±20 |
| LGAC040N04A | LEADSILICON | PDFNWB5×6-8L | S-N | 40 | 76 | 1.8 | 4 | 5.5 | 6 | 7.8 | ±20 |
| LGAM004N04A | LEADSILICON | PDFN8*8 | S-N | 40 | 500 | 1.6 | 0.4 | 0.56 | 0.8 | 1.2 | ±20 |
| LGAM005N04A | LEADSILICON | PDFN8*8 | S-N | 40 | 500 | 1.6 | 0.5 | 0.7 | 1 | 1.5 | ±20 |
| LGLL004N04A | LEADSILICON | TOLL | S-N | 40 | 500 | 1.6 | 0.4 | 0.56 | 0.8 | 1.2 | ±20 |
| LGLL005N04A | LEADSILICON | TOLL | S-N | 40 | 400 | 1.6 | 0.5 | 0.7 | 1 | 1.5 | ±20 |
| LGLL006N04A | LEADSILICON | TOLL | S-N | 40 | 300 | 1.6 | 0.55 | 0.77 | 1.2 | 1.8 | ±20 |
| LGLL008N04A | LEADSILICON | TOLL | S-N | 40 | 300 | 1.6 | 0.8 | 1.12 | 1.5 | 2.3 | ±20 |
| LGLL008N04B | LEADSILICON | TOLL | S-N | 40 | 300 | 3 | 0.8 | 1.12 | ±20 | ||
| LGLL012N04A | LEADSILICON | TOLL | S-N | 40 | 250 | 1.6 | 1.2 | 1.7 | 1.9 | 2.9 | ±20 |
| LGSL004N04A | LEADSILICON | sTOLL | S-N | 40 | 300 | 1.6 | 0.4 | 0.56 | 0.8 | 1.2 | ±20 |
| LG1U018N04A | LEADSILICON | TO-252-2L | S-N | 40 | 130 | 1.8 | 1.8 | 2.2 | 2.4 | 3.4 | ±20 |
| LGBM008N04A | LEADSILICON | TO-263-7L | S-N | 40 | 300 | 1.6 | 0.8 | 1.12 | 1.5 | 2.3 | ±20 |
| LGBM008N04B | LEADSILICON | TO-263-7L | S-N | 40 | 300 | 3 | 0.8 | 1.12 | ±20 | ||
| LMBT500P04A | LEADSILICON | SOT-89-3L | S-P | -40 | -7 | -1.7 | 50 | 60 | 60 | 80 | ±20 |