LEADSILICON 低压MOSFET

低压 MOSFET (Low-voltage MOSFET)是多种电流应用中必不可少的电子元件,因为它们能够以低功率损耗切换大电流。它们在低电压下工作,设计为在漏源电压(Vds)通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用,即使在电源电压非常低的情况下也是如此。

可用LEADSILICON低压MOSFET型号:214个
型号 品牌 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LM2E3401B LEADSILICON S-P -30 -4.2 -0.9 45 55 54 68 ±12 SOT-23
LM2E3401L LEADSILICON S-P -30 -3.5 -0.9 48 64 68 90 ±12 SOT-23
LM2E3401 LEADSILICON S-P -30 -4.4 -0.9 50 60 55 70 ±12 SOT-23
LM2E3401D LEADSILICON S-P -30 -4.4 -0.9 50 60 60 75 ±12 SOT-23
LM2E3407L LEADSILICON S-P -30 -3.3 -1.7 55 70 70 100 ±20 SOT-23
LM2E2307A LEADSILICON S-P -30 -2.7 -1.5 75 90 110 140 ±20 SOT-23
LM1K3407A LEADSILICON S-P -30 -4.1 -1.5 40 55 60 80 ±20 SOT-23-3L
LM1K3401A LEADSILICON S-P -30 -4.2 -0.9 45 55 50 68 ±12 SOT-23-3L
LM1Q060P03A LEADSILICON S-P -30 -15 -1.5 7 9 10 14 ±20 SOP8
LM1Q085P03A LEADSILICON S-P -30 -12 -1.5 9 13 13 19 ±20 SOP8
LM1Q110P03A LEADSILICON S-P -30 -10 -1.6 14 18 21 28 ±20 SOP8
LM1Q9435A LEADSILICON S-P -30 -5.1 -1.5 40 55 60 80 ±20 SOP8
LMAB060P03A LEADSILICON S-P -30 -45 -1.5 6 7.5 8.5 11 ±20 PDFNWB3.3×3.3-8L
LMAB075P03A LEADSILICON S-P -30 -40 -1.5 7.5 10 11.5 14 ±20 PDFNWB3.3×3.3-8L
LMAB085P03A LEADSILICON S-P -30 -35 -1.5 8.5 11 12 16 ±20 PDFNWB3.3×3.3-8L
LMAB110P03A LEADSILICON S-P -30 -25 -1.6 12 16 20 26 ±20 PDFNWB3.3×3.3-8L
LMAC018P03A LEADSILICON S-P -30 -200 -1.5 1.8 2.5 3.8 5.7 ±20 PDFNWB5×6-8L
LMAC020P03A LEADSILICON S-P -30 -150 -1.6 2 3 3 4.5 ±20 PDFNWB5×6-8L
LMAC035P03A LEADSILICON S-P -30 -120 -1.7 3.5 4.5 5.5 7 ±20 PDFNWB5×6-8L
LMAC060P03A LEADSILICON S-P -30 -60 -1.5 6 7.5 8.5 11 ±20 PDFNWB5×6-8L
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