LEADSILICON 低压MOSFET

低压 MOSFET (Low-voltage MOSFET)是多种电流应用中必不可少的电子元件,因为它们能够以低功率损耗切换大电流。它们在低电压下工作,设计为在漏源电压(Vds)通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用,即使在电源电压非常低的情况下也是如此。

可用LEADSILICON低压MOSFET型号:214个
型号 品牌 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LM1Q035N03A LEADSILICON S-N 30 25 1.5 3.8 5.5 5.5 8 ±20 SOP8
LM1Q040N03A LEADSILICON S-N 30 20 1.5 5 6.5 7 11 ±20 SOP8
LM1Q060N03A LEADSILICON S-N 30 15 1.6 8 11 11 15 ±20 SOP8
LM1Q080N03A LEADSILICON S-N 30 11.5 1.5 8 11 12 16 ±20 SOP8
LM1Q150N03A LEADSILICON S-N 30 9 1.5 15 20 22 29 ±20 SOP8
LMBN040N03A LEADSILICON S-N 30 25 1.5 4.5 5.5 6.5 10 ±20 DFN2020-6L
LMBN110N03A LEADSILICON S-N 30 10 1.5 12 15 16 21 ±20 DFN2020-6L
LMAB030N03A LEADSILICON S-N 30 75 1.5 3 4 4.5 6.5 ±20 PDFNWB3.3×3.3-8L
LMAB035N03A LEADSILICON S-N 30 60 1.5 3.5 5 5.2 7 ±20 PDFNWB3.3×3.3-8L
LMAB040N03A LEADSILICON S-N 30 50 1.5 4.5 6 6.5 10 ±20 PDFNWB3.3×3.3-8L
LMAB060N03A LEADSILICON S-N 30 30 1.6 6.5 9.5 10.5 15 ±20 PDFNWB3.3×3.3-8L
LMAB110N03A LEADSILICON S-N 30 20 1.5 12 15 15 20 ±20 PDFNWB3.3×3.3-8L
LMAC008N03A LEADSILICON S-N 30 160 1.6 0.75 1.05 1.25 1.9 ±20 PDFNWB5×6-8L
LMAC015N03A LEADSILICON S-N 30 160 1.6 1.4 2 1.9 3 ±20 PDFNWB5×6-8L
LMAC025N03A LEADSILICON S-N 30 120 1.5 2.5 3.5 3.8 5.5 ±20 PDFNWB5×6-8L
LMAC030N03A LEADSILICON S-N 30 100 1.5 2.9 4 4 6.2 ±20 PDFNWB5×6-8L
LMAC035N03A LEADSILICON S-N 30 90 1.5 3.2 5 4.5 7 ±20 PDFNWB5×6-8L
LMAC040N03A LEADSILICON S-N 30 80 1.5 4.5 5.5 6.5 10 ±20 PDFNWB5×6-8L
LMAC060N03A LEADSILICON S-N 30 40 1.6 6 9 10 15 ±20 PDFNWB5×6-8L
LMLL005N03A LEADSILICON S-N 30 300 1.6 0.5 0.7 0.8 1.2 ±20 TOLL
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