主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
LMAC075P06A LEADSILICON S-P -60 -85 -1.7 7.5 10 9 13 ±20 PDFNWB5×6-8L
LMAC120P06A LEADSILICON S-P -60 -70 -1.8 12 15 14 20 ±20 PDFNWB5×6-8L
LMAC250P06A LEADSILICON S-P -60 -40 -1.6 25 30 30 40 ±20 PDFNWB5×6-8L
LM1U160P06A LEADSILICON S-P -60 -80 -1.6 16 20 19 25 ±20 TO-252-2L
LM1U240P06A LEADSILICON S-P -60 -50 -1.6 24 28 27 32 ±20 TO-252-2L
LM1U250P06A LEADSILICON S-P -60 -40 -1.6 25 30 30 40 ±20 TO-252-2L
LM1U280P06A LEADSILICON S-P -60 -30 -1.6 28 33 31 36 ±20 TO-252-2L
LM1U800P60A LEADSILICON S-P -60 -14 -1.8 80 100 95 130 ±20 TO-252-2L
LM1P240P06A LEADSILICON S-P -60 -50 -1.6 24 28 27 32 ±20 TO-220C
LM2E2309 LEADSILICON P -60 -3 -1.8 120 160 160 200 ±20 SOT-23
LMDW7252KA LEADSILICON N+P 60--50 0.34--0.18 1.6--1.6 1600-3500 1900-5000 1700-3800 2200-6000 ±20-±20 SOT-363
LMDU260C06A LEADSILICON N+P 60--60 20--14 1.6--1.8 26-80 34-100 31-95 41-120 ±20-±20 TO-252-4L
LMAC044N06A LEADSILICON S-N 65 87 3 4.4 5.7 ±20 PDFNWB5×6-8L
LM2P065N07A LEADSILICON S-N 68 80 3 6.5 8.5 ±20 TO-220C
LMLL025N08A LEADSILICON S-N 80 300 3 2.5 3.5 ±20 TOLL
LMBM025N08A LEADSILICON S-N 80 300 3 2.5 3.5 ±20 TO-263-7L
LGAM007N08A LEADSILICON S-N 80 500 3 0.7 0.98 2.5 3.8 ±20 PDFN8*8
LGLL008N08A LEADSILICON S-N 80 300 3 0.8 1.12 ±20 TOLL
LGLL011N08A LEADSILICON S-N 80 400 3 1.1 1.5 2.5 3.8 ±20 TOLL
LGBM008N08A LEADSILICON S-N 80 300 3 0.8 1.12 ±20 TO-263-7L
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