主页产品 MOSFET 中压MOSFET LEADSILICON

LEADSILICON 中压MOSFET

中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用LEADSILICON中压MOSFET型号：275个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
BSS123 LEADSILICON S-N 100 0.17 1.8 4000 6000 4500 8000 ±20 SOT-23
BSS123K LEADSILICON S-N 100 0.17 1.4 3000 4500 3200 6000 ±20 SOT-23
LG2E03N10A LEADSILICON S-N 100 3.3 1.6 95 130 135 190 ±20 SOT-23
LM2E2N10A LEADSILICON S-N 100 2 1.7 190 230 210 250 ±20 SOT-23
LG1Q064N10A LEADSILICON S-N 100 20 2 7.5 9.5 9.5 13 ±20 SOP8
LG1Q125N10A LEADSILICON S-N 100 12 1.8 13 17 18 25 ±20 SOP8
LG1Q950N10A LEADSILICON S-N 100 3.5 1.6 95 130 135 190 ±20 SOP8
LM1Q950N10A LEADSILICON S-N 100 4 1.7 95 110 100 130 ±20 SOP8
LMAC220N10A LEADSILICON S-N 100 40 3 22 28 ±20 PDFNWB5×6-8L
LMAC370N10A LEADSILICON S-N 100 20 1.5 37 48 39 55 ±20 PDFNWB5×6-8L
LM1U240N10A LEADSILICON S-N 100 35 1.2 24 35 27 40 ±20 TO-252-2L
LM1U300N10A LEADSILICON S-N 100 30 3 30 38 ±20 TO-252-2L
LM1U400N10A LEADSILICON S-N 100 25 1.5 40 55 45 60 ±20 TO-252-2L
LM1U950N10A LEADSILICON S-N 100 15 1.7 95 110 100 130 ±20 TO-252-2L
LM1P300N10A LEADSILICON S-N 100 30 3 30 38 ±20 TO-220C
LM1P400N10A LEADSILICON S-N 100 25 1.5 40 55 45 60 ±20 TO-220C
LM1P950N10A LEADSILICON S-N 100 15 1.7 95 110 100 130 ±20 TO-220C
LGAC037N10A LEADSILICON S-N 100 160 3 3.7 4.2 ±20 PDFNWB5×6-8L
LGAC040N10A LEADSILICON S-N 100 120 3 4 5 ±20 PDFNWB5×6-8L
LGAC062N10A LEADSILICON S-N 100 100 2 6.2 7.5 6.5 8 ±20 PDFNWB5×6-8L
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