高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ) @VGS 10V | RDS(ON)_Max (mΩ) @VGS 10V | VGS_Max (V) |
|---|---|---|---|---|---|---|---|---|---|
| SSCV10N65GT4 | AF | TO-220-3L | N | 650 | 5 | 3 | 840 | ±30 | |
| LPAC9N20A | LEADSILICON | PDFNWB5×6-8L | S-N | 200 | 9 | 1.5 | 220 | 300 | ±30 |
| LP2E1N50A | LEADSILICON | SOT-23 | S-N | 500 | 1 | 3 | 8500 | 10500 | ±30 |
| LPPF20N50A | LEADSILICON | TO-220F | S-N | 500 | 20 | 3 | 220 | 270 | ±30 |
| LPPF13N50A | LEADSILICON | TO-220F | S-N | 500 | 13 | 3 | 400 | 480 | ±30 |
| LP1T1N60A | LEADSILICON | SOT-223 | S-N | 600 | 1 | 3 | 8300 | 9500 | ±30 |
| LP1D7N60A | LEADSILICON | TO-251 | S-N | 600 | 7 | 3 | 1050 | 1300 | ±30 |
| LP1D4N60A | LEADSILICON | TO-251 | S-N | 600 | 4 | 3 | 2400 | 2700 | ±30 |
| LP1U7N60A | LEADSILICON | TO-252 | S-N | 600 | 7 | 3 | 1050 | 1300 | ±30 |
| LP1U4N60A | LEADSILICON | TO-252 | S-N | 600 | 4 | 3 | 2400 | 2700 | ±30 |
| LP1U2N60A | LEADSILICON | TO-252 | S-N | 600 | 2 | 3 | 3300 | 4200 | ±30 |
| LP2P4N60A | LEADSILICON | TO-220C | S-N | 600 | 4 | 3 | 2400 | 2700 | ±30 |
| LPPF4N60A | LEADSILICON | TO-220F | S-N | 600 | 4 | 3 | 2400 | 2700 | ±30 |
| LPCB4N60A | LEADSILICON | TO-263-2L | S-N | 600 | 4 | 3 | 2400 | 2700 | ±30 |
| LP1D4N65A | LEADSILICON | TO-251 | S-N | 650 | 4 | 3 | 2600 | 3100 | ±30 |
| LPED2N65A | LEADSILICON | TO-251 | S-N | 650 | 2 | 3 | 4000 | 5300 | ±30 |
| LP1U7N65A | LEADSILICON | TO-252 | S-N | 650 | 7.5 | 3 | 1100 | 1350 | ±30 |
| LP1U4N65A | LEADSILICON | TO-252 | S-N | 650 | 4 | 3 | 2600 | 3100 | ±30 |
| LP1U2N65A | LEADSILICON | TO-252 | S-N | 650 | 2 | 3 | 4000 | 5000 | ±30 |
| LP2P4N65A | LEADSILICON | TO-220C | S-N | 650 | 4 | 3 | 2600 | 3100 | ±30 |