高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ) @VGS 10V | RDS(ON)_Max (mΩ) @VGS 10V | VGS_Max (V) |
|---|---|---|---|---|---|---|---|---|---|
| JMPF7N65BJ | JJM | TO-220FP-3L | N | 650 | 7 | 3 | 1150 | 1350 | ±30 |
| JMPF840BJ | JJM | TO-220FP-3L | N | 500 | 9 | 3 | 750 | 970 | ±30 |
| JMPF8N60BJ | JJM | TO-220FP-3L | N | 600 | 8 | 3 | 990 | 1290 | ±30 |
| JMPK3N50BJ | JJM | TO-252-3L | N | 500 | 2.2 | 3.1 | 2601 | 3381 | ±30 |
| JMPK4N60BJ | JJM | TO-252-3L | N | 600 | 4 | 3 | 1940 | 2520 | ±30 |
| JMPK4N65BJ | JJM | TO-252-3L | N | 650 | 4 | 3 | 2220 | 2640 | ±30 |
| JMPK5N50BJ | JJM | TO-252-3L | N | 500 | 5 | 3 | 1400 | 1810 | ±30 |
| JMPK6N70BJ | JJM | TO-252-3L | N | 700 | 6 | 3 | 1251 | 1627 | ±30 |
| JMPK7N65BJ | JJM | TO-252-3L | N | 650 | 7 | 3 | 1150 | 1350 | ±30 |
| JMPS25N50BJ | JJM | TO-247-3L | N | 500 | 28 | 3.1 | 234 | 304 | ±30 |
| SSC8V6N65GT8 | AF | TO-252 | N | 700 | 6 | 3 | 1290 | ±30 | |
| SSC8V4N65GT8 | AF | TO-252 | N | 650 | 4 | 3 | 2220 | ±30 | |
| SSC8V7N65GT8 | AF | TO-252 | N | 650 | 7 | 3 | 1150 | ±30 | |
| SSC8V10N65GT8 | AF | TO-252 | N | 650 | 10 | 3 | 820 | ±30 | |
| SSC8V12N65GT8 | AF | TO-252 | N | 650 | 12 | 3 | 640 | ±30 | |
| SSC8V16N65GT8 | AF | TO-252 | N | 650 | 16 | 3 | 480 | ±30 | |
| SSC8V20N65GT8 | AF | TO-252 | N | 650 | 20 | 3 | 420 | ±30 | |
| SSC8V30N65GT8 | AF | TO-252 | N | 650 | 30 | 3 | 235 | ±30 | |
| SSC8V4N60GT8 | AF | TO-252 | N | 600 | 4 | 3 | 1900 | ±30 | |
| SSC8V8N60GT8 | AF | TO-252 | N | 600 | 8 | 3 | 1000 | ±30 |