高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ) @VGS 10V | RDS(ON)_Max (mΩ) @VGS 10V | VGS_Max (V) |
|---|---|---|---|---|---|---|---|---|---|
| LPPF12N65A | LEADSILICON | TO-220F | S-N | 650 | 12 | 3 | 640 | 800 | ±30 |
| LPPF10N65A | LEADSILICON | TO-220F | S-N | 650 | 10 | 4 | 800 | 1000 | ±30 |
| LPPF7N65A | LEADSILICON | TO-220F | S-N | 650 | 7.5 | 3 | 1100 | 1350 | ±30 |
| LPPF5N65A | LEADSILICON | TO-220F | S-N | 650 | 5 | 3 | 1550 | 1900 | ±30 |
| LPPF5N65X | LEADSILICON | TO-220F | S-N | 650 | 5 | 3 | 2200 | 2600 | ±30 |
| LPPF4N65A | LEADSILICON | TO-220F | S-N | 650 | 4 | 3 | 2600 | 3100 | ±30 |
| LPCB7N65A | LEADSILICON | TO-263-2L | S-N | 650 | 7.5 | 3 | 1100 | 1350 | ±30 |
| LPCB5N65A | LEADSILICON | TO-263-2L | S-N | 650 | 5 | 3 | 1550 | 1900 | ±30 |
| LPCB4N65A | LEADSILICON | TO-263-2L | S-N | 650 | 4 | 3 | 2600 | 3100 | ±30 |
| LP1D7N70A | LEADSILICON | TO-251 | S-N | 700 | 7 | 3 | 1300 | 1550 | ±30 |
| LPPF10N70A | LEADSILICON | TO-220F | S-N | 700 | 10 | 3 | 900 | 1100 | ±30 |
| LPPF7N70A | LEADSILICON | TO-220F | S-N | 700 | 7 | 3 | 1300 | 1550 | ±30 |
| LPPF4N70A | LEADSILICON | TO-220F | S-N | 700 | 4 | 3 | 3200 | 3800 | ±30 |
| LPPF8N65A | LEADSILICON | TO-220F | S-N | 800 | 8 | 3 | 1200 | 1400 | ±30 |
| LCPF60R230A | LEADSILICON | TO-220F | S-N | 600 | 15 | 3.5 | 230 | 280 | ±30 |
| LCTN60R090AF | LEADSILICON | TO-247 | S-N | 600 | 35 | 3.5 | 90 | 105 | ±30 |
| LCTN60R080A | LEADSILICON | TO-247 | S-N | 600 | 38 | 4 | 80 | 90 | ±30 |
| LC1D65R550A | LEADSILICON | TO-251 | S-N | 650 | 8 | 3 | 550 | 640 | ±30 |
| LC1D65R1K0A | LEADSILICON | TO-251 | S-N | 650 | 5 | 3 | 1000 | 1200 | ±30 |
| LC1U65R1K0A | LEADSILICON | TO-252 | S-N | 650 | 5 | 3 | 1000 | 1200 | ±30 |