主页产品 MOSFET 高压MOSFET

高压MOSFET

高压MOSFET的优点是工作电压是中高压(一般小于40V),尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压,高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。

制造商
VDS_Max/V
-
ID_Max/A
-
VGS(th)Typ/V
-
RDS(ON)Typ (mΩ) @VGS 10V
-
RDS(ON)_Max (mΩ) @VGS 10V
-
VGS_Max (V)
-
可用高压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ) @VGS 10V RDS(ON)_Max (mΩ) @VGS 10V VGS_Max (V)
JMH65R360MF JJM TO-220FP-3L N 650 7.4 3.4 311 360 ±30
JMH65R360MK JJM TO-252-3L N 650 7.3 3.3 338 360 ±30
JMH65R360PF JJM TO-220FP-3L N 650 8.2 3.4 268 348 ±30
JMH65R360PK JJM TO-252-3L N 650 11.7 3.3 283 368 ±30
JMH65R400MFFD JJM TO-220FP-3L N 650 9 4 338 400 ±30
JMH65R400MKFD JJM TO-252-3L N 650 7 4 350 400 ±30
JMH65R400MPLNFD JJM DFN8080-4L N 650 9 3.9 359 400 ±30
JMH65R430ACFP JJM TO-220FP-NL N 650 11.2 3.5 364 430 ±20
JMH65R430AE JJM TO-263-3L N 650 11.2 3.5 364 430 ±20
JMH65R430AF JJM TO-220FP-3L N 650 11.2 3.5 364 430 ±20
JMH65R430AK JJM TO-252-3L N 650 11.2 3.5 370 430 ±20
JMH65R430APLN JJM DFN8080-4L N 650 10.4 3.5 370 430 ±20
JMH65R600MF JJM TO-220FP-3L N 650 6.9 3.5 507 600 ±30
JMH65R600MK JJM TO-252-3L N 650 7.4 3.5 535 600 ±30
JMH65R640AK JJM TO-252-3L N 650 9 3.1 578 650 ±20
JMH65R900PK JJM TO-252-3L N 650 4.6 3.2 709 900 ±30
JMH65R950MF JJM TO-220FP-3L N 650 5.3 3.4 866 950 ±30
JMH65R950MPLN JJM DFN8080-4L N 650 7 3.3 908 950 ±30
JMH65R980ACFP JJM TO-220FP-NL N 650 4 3.5 895 980 ±20
JMH65R980AF JJM TO-220FP-3L N 650 4 3.5 895 980 ±20