高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ) @VGS 10V | RDS(ON)_Max (mΩ) @VGS 10V | VGS_Max (V) |
|---|---|---|---|---|---|---|---|---|---|
| JMH65R190AC | JJM | TO-220-3L | N | 650 | 20 | 3.5 | 170 | 190 | ±20 |
| JMH65R190ACFP | JJM | TO-220FP-NL | N | 650 | 20 | 3.5 | 170 | 190 | ±30 |
| JMH65R190AE | JJM | TO-263-3L | N | 650 | 20 | 3.5 | 170 | 190 | ±20 |
| JMH65R190AF | JJM | TO-220FP-3L | N | 650 | 20 | 3.5 | 170 | 190 | ±20 |
| JMH65R190AFFD | JJM | TO-220FP-3L | N | 650 | 20 | 3.5 | 170 | 190 | ±20 |
| JMH65R190APLN | JJM | DFN8080-4L | N | 650 | 17.4 | 3.5 | 169 | 190 | ±20 |
| JMH65R190APLNFD | JJM | DFN8080-4L | N | 650 | 17.4 | 3.5 | 169 | 190 | ±30 |
| JMH65R190AS | JJM | TO-247-3L | N | 650 | 20 | 3.5 | 168 | 190 | ±20 |
| JMH65R190AW | JJM | TO-262-3L | N | 650 | 20 | 3.5 | 170 | 190 | ±20 |
| JMH65R190PCFD | JJM | TO-220-3L | N | 650 | 15 | 3.4 | 156 | 190 | ±30 |
| JMH65R190PEFD | JJM | TO-263-3L | N | 650 | 17 | 3.3 | 156 | 190 | ±30 |
| JMH65R190PFFD | JJM | TO-220FP-3L | N | 650 | 12 | 3.6 | 148 | 190 | ±30 |
| JMH65R190PPLNFD | JJM | DFN8080-4L | N | 650 | 19 | 3.3 | 159 | 190 | ±30 |
| JMH65R190PSFD | JJM | TO-247-3L | N | 650 | 21 | 3.4 | 173 | 190 | ±30 |
| JMH65R290ACFP | JJM | TO-220FP-NL | N | 650 | 12 | 3.5 | 260 | 290 | ±25 |
| JMH65R290AE | JJM | TO-263-3L | N | 650 | 12 | 3.5 | 259 | 290 | ±25 |
| JMH65R290AF | JJM | TO-220FP-3L | N | 650 | 12 | 3.5 | 260 | 290 | ±25 |
| JMH65R290APLN | JJM | DFN8080-4L | N | 650 | 10 | 3.5 | 262 | 290 | ±20 |
| JMH65R360AF | JJM | TO-220FP-3L | N | 650 | 11 | 3.3 | 320 | 360 | ±30 |
| JMH65R360AK | JJM | TO-252-3L | N | 650 | 10.3 | 3.3 | 320 | 360 | ±30 |