JMH65R090PTLFD详情

650V,24A,80mΩ N沟道功率超级结场效应晶体管 JMH65R090PTLFD

特点

• 优秀的$R_{\mathrm{D}\mathrm{S}\mathrm{(}\mathrm{或者}\mathrm{N}\mathrm{)}}$以及低栅极电荷
• 100%通过UIS测试
• 检测率为100%的ΔVds
• 无卤素;符合RoHS

JMH65R090PTLFD应用

• 与PFC的SMPS
• 反激式拓扑与LLC拓扑
• 银牌ATX电源、适配器、电视、照明、电信设备

PowerJE®10x12

Pin Assignment

Product Summary

Parameters	Value	Unit
VDSS	650	V
VGS(th)_Typ	3.3	V
ID(@VGS=10V)	24	A
RDS(ON)_Typ(@VGS=10V)	80	mΩ

RoHS

Schematic Diagram

订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMH65R090PTLFD-13	H65R090PF	1	Tape&Reel	PowerJE®10x12	2000	10000

Absolute Maximum Ratings (@ ${\mathrm{T}}_{\mathrm{C}}={25}^{\circ }\mathrm{C}$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		650	V
VGS	Gate-to-Source Voltage		±30	V
ID	Continuous Drain Current	TC=25°C	24	A
		TC=100°C	15
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		414	mJ
PD	Power Dissipation	TC=25°C	135	W
		TC=100°C	54
TJ, TSTG	Junction & Storage Temperature Range		-55 to 150	°C

Thermal Characteristics

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	35	°C/W
RθJC	Thermal Resistance, Junction to Case	0.9

Electrical Characteristics $(T_{\mathrm{J}}={25}^{\circ }\mathrm{C}$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	650	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=650V, VGS=0V	-	-	10.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±30V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	2.3	3.3	4.3	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=10A	-	80	90	mΩ
Dynamic Characteristics
Rg	Gate Resistance	f=1MHz	-	3.3	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=325V, f=1MHz	1995	2793	3771	pF
Coss	Output Capacitance		46	64	86	pF
Crss	Reverse Transfer Capacitance		-	6.8	-	pF
Qg	Total Gate Charge	VGS=0 to 10V VDS=325V, ID=20A	41	58	78	nC
Qgs	Gate Source Charge		15	20	27	nC
Qgd	Gate Drain("Miller") Charge		16	22	29	nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGS=10V, VDD=325V ID=20A, RGEN=24Ω	-	66	-	ns
tr	Turn-On Rise Time		-	67	-	ns
td(off)	Turn-Off DelayTime		-	155	-	ns
tf	Turn-Off Fall Time		-	45	-	ns
Body Diode Characteristics
IS	Maximum Continuous Body Diode Forward Current		-	-	24	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	95	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=20A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=20A, di/dt=100A/us	137	192	259	ns
Qrr	Body Diode Reverse Recovery Charge		-	1230	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.

2. $E_{AS}$ condition: Starting $T_J=25C$ , $V_{DD}=75V$ , $V_{GS}=10V$ , $R_G=25ohm$ , $L=10mH$ , $I_{AS}=7.2A$ , $V_{DD}=0V$ during time in avalanche.

3. $R_{0,JA}$ is measured with the device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

4. Pulse Test: Pulse Width $\le 300\mu s$ Duty Cycle $\le 0.5\%$

典型性能特性

Figure 1: Power De-rating

Figure 2: Current De-rating

Figure 3: Normalized Maximum Transient Thermal Impedance

Figure 4: Peak Current Capacity

Figure 5: Output Characteristics

Figure 6: Typical Transfer Characteristics

Figure 7: On-resistance vs. Drain Current

Figure 8: Body Diode Characteristics

Figure 9: Gate Charge Characteristics

Figure 10: Capacitance Characteristics

Figure 11: Normalized Breakdown voltage vs. Junction Temperature

Figure 12: Normalized on Resistance vs. Junction Temperature

Figure 13: Normalized Threshold Voltage vs. Junction Temperature

Figure 14: $R_{\mathrm{\text{DS(ON)}}}$ vs. $V_{\mathrm{\text{GS}}}$

Figure 15: Maximum Safe Operating Area

测试电路

Figure 1: Gate Charge Test Circuit & Waveform

Figure 2: Resistive Switching Test Circuit & Waveform

Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

Figure 4: Diode Recovery Test Circuit & Waveform

JMH65R090PTLFD封装机械数据(PowerJE®10x12)

Package Outlines

Top View

Side View

Bottom View

DIM.	MILLIMETER
	MIN	NOM	MAX
A	2.20	2.30	2.50
b	0.70	0.80	0.90
b1	9.70	9.80	9.90
b2	0.42	0.46	0.50
C	0.40	0.50	0.65
D	10.28	10.38	10.58
D2	3.30
E	9.70	9.90	10.10
E1	7.80
E4	8.80
E5	9.20
e	1.20(BSC)
H	11.48	11.68	11.88
HI	6.55	6.75	6.85
H2	7.30
H3	3.20
H4	3.80
K1	4.18
L	1.70	1.90	2.10
L1	0.70
L2	0.60
L4	1.00	1.15	1.30

Front View

Recommended Soldering Footprint

NOTES:

1. Dimension and tolerance per ASME Y14.5M, 1994.

2. All dimensions in millimeter.

3. Dimensions do not include burrs or mold flash. Mold flash or burrs does not exceed $0.150\mathrm{m}\mathrm{m}$ .

DIMENSIONS: MILIMETERS