主页产品 MOSFET 低压MOSFET

低压MOSFET

低压 MOSFET (Low-voltage MOSFET)是多种电流应用中必不可少的电子元件,因为它们能够以低功率损耗切换大电流。它们在低电压下工作,设计为在漏源电压(Vds)通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用,即使在电源电压非常低的情况下也是如此。

制造商
VDS_Max/V
-
ID_Max/A
-
VGS(th)Typ/V
-
RDS(ON)Typ (mΩ)@VGS 10V
-
RDS(ON)Max (mΩ)@VGS 10V
-
RDS(ON)Typ (mΩ)@VGS4.5V
-
RDS(ON)Max (mΩ)@VGS 4.5V
-
VGS_Max/V
-
可用低压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LGAC012N03A LEADSILICON PDFNWB5×6-8L S-N 30 160 1.5 1.2 1.6 1.5 2.2 ±20
LGAC014N03A LEADSILICON PDFNWB5×6-8L S-N 30 150 1.5 1.4 1.8 1.9 2.5 ±20
LGAM003N03A LEADSILICON PDFN8*8 S-N 30 500 1.6 0.3 0.42 0.5 0.8 ±20
LGLL003N03A LEADSILICON TOLL S-N 30 500 1.6 0.3 0.42 0.5 0.8 ±20
LGLL007N03A LEADSILICON TOLL S-N 30 300 1.6 0.7 0.98 1 1.5 ±20
LGSL003N03A LEADSILICON sTOLL S-N 30 300 1.6 0.3 0.42 0.5 0.8 ±20
LGBM007N03A LEADSILICON TO-263-7L S-N 30 300 1.6 0.7 0.98 1 1.5 ±20
LMDN3400L LEADSILICON DFNWB2*2-6L-U D-N 30 5 0.9 22 30 26 36 ±12
LMDN3400A LEADSILICON DFNWB2*2-6L-U D-N 30 6 0.9 20 28 22 30 ±12
LMBD040N03DA LEADSILICON DFNWB2*2-6L-U D-N 30 25 1.5 4.5 5.5 6.5 10 ±20
LMBD060N03DA LEADSILICON PDFNWB3.3×3.3-8L-B D-N 30 30 1.6 9 12 13 17 ±20
LM1K3400Z LEADSILICON SOT-23-3L S-N 30 5.8 0.9 22 28 23 30 ±12
LM2N3541K LEADSILICON DFN1006-3L S-N 30 0.3 1.1 1800 3500 2000 4000 ±20
LM1U040N03D LEADSILICON TO-252-2L S-N 30 80 1.5 4.2 5.3 6.5 8.5 ±20
LM1U040N03Y LEADSILICON TO-252-2L S-N 30 80 1.5 4.5 5.5 6.5 10 ±20
LM1U040N03N LEADSILICON TO-252-2L S-N 30 80 1.5 3.8 5 6 8 ±20
LM2E3007A LEADSILICON SOT-23 S-P -30 -7 -1.6 16 21 23 30 ±20
LM2E3407 LEADSILICON SOT-23 S-P -30 -4.1 -1.5 40 55 60 80 ±20
LM2E3407A LEADSILICON SOT-23 S-P -30 -4.1 -1.5 40 55 60 80 ±20
LM2E3401A LEADSILICON SOT-23 S-P -30 -4.2 -0.9 45 55 54 68 ±12