主页产品 MOSFET 低压MOSFET

低压MOSFET

低压 MOSFET (Low-voltage MOSFET)是多种电流应用中必不可少的电子元件,因为它们能够以低功率损耗切换大电流。它们在低电压下工作,设计为在漏源电压(Vds)通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用,即使在电源电压非常低的情况下也是如此。

制造商
VDS_Max/V
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ID_Max/A
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VGS(th)Typ/V
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RDS(ON)Typ (mΩ)@VGS 10V
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RDS(ON)Max (mΩ)@VGS 10V
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RDS(ON)Typ (mΩ)@VGS4.5V
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RDS(ON)Max (mΩ)@VGS 4.5V
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VGS_Max/V
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可用低压MOSFET型号:{{totalCount}}
型号 制造商 封装 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V
LM1U015N03A LEADSILICON TO-252-2L S-N 30 160 1.6 1.6 2.2 2.2 3 ±20
LM1U025N03A LEADSILICON TO-252-2L S-N 30 120 1.5 2.5 3.5 3.6 5.5 ±20
LM1U030N03A LEADSILICON TO-252-2L S-N 30 100 1.5 3 4 4.5 6.5 ±20
LM1U035N03A LEADSILICON TO-252-2L S-N 30 90 1.5 3.2 5 4.5 7 ±20
LM1U040N03A LEADSILICON TO-252-2L S-N 30 80 1.5 4.5 5.5 6.5 10 ±20
LM1U060N03A LEADSILICON TO-252-2L S-N 30 40 1.6 6 9 10 15 ±20
LM2P015N03A LEADSILICON TO-220C S-N 30 160 1.6 2 2.5 2.5 3.3 ±20
LM1P030N03A LEADSILICON TO-220C S-N 30 120 1.5 3 4 4.5 6.5 ±20
LM1P035N03A LEADSILICON TO-220C S-N 30 100 1.5 3.5 5 4.5 7 ±20
LM2P025N03A LEADSILICON TO-220C S-N 30 130 1.5 3.5 4 4.5 6.5 ±20
LM1P040N03A LEADSILICON TO-220C S-N 30 80 1.5 4.5 5.5 6.5 10 ±20
LMCB003N03A LEADSILICON TO-263-7L S-N 30 400 1.6 0.28 0.39 0.62 1 ±20
LMCB004N03A LEADSILICON TO-263-7L S-N 30 300 1.6 0.4 0.56 0.84 1.3 ±20
LMCB006N03A LEADSILICON TO-263-7L S-N 30 400 1.6 0.58 0.81 0.7 1.1 ±20
LGAB011N03A LEADSILICON PDFNWB3.3×3.3-8L S-N 30 100 1.6 1.1 1.5 2 3 ±20
LGAB060N03A LEADSILICON PDFNWB3.3×3.3-8L S-N 30 28 1.7 6 8 9.5 12 ±20
LGAB080N03A LEADSILICON PDFNWB3.3×3.3-8L S-N 30 14 1.7 8 10 12 16 ±20
LGAC005N03A LEADSILICON PDFNWB5×6-8L S-N 30 200 1.6 0.5 0.7 0.8 1.2 ±20
LGAC006N03B LEADSILICON PDFNWB5×6-8L S-N 30 200 1.6 0.55 0.77 1 1.5 ±20
LGAC006N03A LEADSILICON PDFNWB5×6-8L S-N 30 200 1.6 0.6 0.84 0.95 1.5 ±20