低压 MOSFET （Low-voltage MOSFET）是多种电流应用中必不可少的电子元件，因为它们能够以低功率损耗切换大电流。它们在低电压下工作，设计为在漏源电压（Vds）通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用，即使在电源电压非常低的情况下也是如此。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LM2E2302 | LEADSILICON | SOT-23 | S-N | 20 | 4 | 0.65 | 22 | 28 | ±10 | ||
| LM2E2302A | LEADSILICON | SOT-23 | S-N | 20 | 4 | 0.65 | 22 | 28 | ±10 | ||
| LM2E2302B | LEADSILICON | SOT-23 | S-N | 20 | 3.5 | 0.65 | 35 | 48 | ±12 | ||
| LM2E2302C | LEADSILICON | SOT-23 | S-N | 20 | 3 | 0.65 | 50 | 70 | ±12 | ||
| LM2E2302S | LEADSILICON | SOT-23 | S-N | 20 | 4.3 | 0.65 | 19 | 27 | ±12 | ||
| LM2E2312A | LEADSILICON | SOT-23 | S-N | 20 | 6.8 | 0.65 | 15 | 20 | ±12 | ||
| LM2E3416KA | LEADSILICON | SOT-23 | S-N | 20 | 7 | 0.65 | 15 | 22 | ±12 | ||
| LM2E8810A | LEADSILICON | SOT-23 | S-N | 20 | 7 | 0.7 | 13 | 17 | ±12 | ||
| LM1K2008A | LEADSILICON | SOT-23-3L | S-N | 20 | 8 | 0.65 | 11 | 15 | ±12 | ||
| LM1K3416KA | LEADSILICON | SOT-23-3L | S-N | 20 | 7 | 0.65 | 15 | 22 | ±12 | ||
| LMAB031N02A | LEADSILICON | PDFNWB3.3×3.3-8L | S-N | 20 | 60 | 0.65 | 3.1 | 4.5 | ±12 | ||
| LMAC021N02A | LEADSILICON | PDFNWB5×6-8L | S-N | 20 | 120 | 0.65 | 2.1 | 2.8 | ±10 | ||
| LMAC031N02A | LEADSILICON | PDFNWB5×6-8L | S-N | 20 | 90 | 0.65 | 3.1 | 4.5 | ±12 | ||
| LMAC045N02A | LEADSILICON | PDFNWB5×6-8L | S-N | 20 | 60 | 0.6 | 4.5 | 6.5 | ±12 | ||
| LM1U021N02A | LEADSILICON | TO-252-2L | S-N | 20 | 120 | 0.65 | 2.1 | 2.8 | ±10 | ||
| LM1U031N02A | LEADSILICON | TO-252-2L | S-N | 20 | 90 | 0.65 | 3.1 | 4.5 | ±12 | ||
| LM1U045N02A | LEADSILICON | TO-252-2L | S-N | 20 | 60 | 0.6 | 4.5 | 6.5 | ±12 | ||
| LM1U045N02C | LEADSILICON | TO-252-2L | S-N | 20 | 60 | 0.6 | 4.5 | 6.5 | ±12 | ||
| LM1U080N02A | LEADSILICON | TO-252-2L | S-N | 20 | 40 | 0.65 | 8 | 12 | ±12 | ||
| LMDW3134K | LEADSILICON | SOT-363 | D-N | 20 | 0.75 | 0.7 | 200 | 350 | ±10 |