低压 MOSFET （Low-voltage MOSFET）是多种电流应用中必不可少的电子元件，因为它们能够以低功率损耗切换大电流。它们在低电压下工作，设计为在漏源电压（Vds）通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用，即使在电源电压非常低的情况下也是如此。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| JMTV2333A | JJM | DFN2020-6L | P | -12 | -8 | -0.7 | ±12 | ||||
| JMTV250P02A | JJM | DFN2020-6L | P | -20 | -10 | -0.7 | ±12 | ||||
| RS2301E | REASUNOS | SOT-23 | P | -20 | -2.3 | 70 | 110 | ||||
| RS3415E | REASUNOS | SOT-23 | P | -20 | -4 | 33 | 50 | ||||
| RS2302E | REASUNOS | SOT-23 | N | 20 | 2.1 | 32 | 45 | ||||
| RS2300E | REASUNOS | SOT-23 | N | 20 | 4.5 | 21 | 32 | ||||
| RS2N7002E | REASUNOS | SOT-23 | N | 60 | 0.34 | 1300 | 5000 | ||||
| RS20N60D | REASUNOS | TO-252 | N | 20 | 60 | 4.8 | 6.5 | ||||
| RS20N90D | REASUNOS | TO-252 | N | 20 | 90 | 3.7 | 5 | ||||
| RS3401E | REASUNOS | SOT-23 | P | -30 | -4.2 | 50 | 65 | ||||
| RS4435 | REASUNOS | SOP-8 | P | -30 | -11 | 15 | 20 | ||||
| RS3400E | REASUNOS | SOT-23 | N | 30 | 5.8 | 27 | 35 | ||||
| RS30N30K | REASUNOS | DFN3*3 | N | 30 | 30 | 5.8 | 9 | ||||
| RS30N50K | REASUNOS | DFN3*3 | N | 30 | 50 | 3.8 | 5.5 | ||||
| RS30N60D | REASUNOS | TO-252 | N | 30 | 60 | 6.2 | 7.5 | ||||
| RS30N86D | REASUNOS | TO-252 | N | 30 | 86 | 4.7 | 5.5 | ||||
| RS30N120G | REASUNOS | DFN5*6 | N | 30 | 120 | 3 | 4 | ||||
| RS30N150D | REASUNOS | TO-252 | N | 30 | 150 | 2.6 | 3.4 | ||||
| RS30N150T | REASUNOS | TO-220 | N | 30 | 150 | 2.6 | 3.4 | ||||
| TKMN2300A | CTK | SOT-23 | N | 20 | 4.5 | 0.5~0.9 | - | - | ±10 |