低压 MOSFET （Low-voltage MOSFET）是多种电流应用中必不可少的电子元件，因为它们能够以低功率损耗切换大电流。它们在低电压下工作，设计为在漏源电压（Vds）通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用，即使在电源电压非常低的情况下也是如此。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| JMTG3002B | JJM | PDFN5x6-8L | N | 30 | 120 | 1.9 | 1.7 | 2.2 | ±20 | ||
| JMTG3003A | JJM | PDFN5x6-8L | N | 30 | 142 | 1.6 | 2.3 | 3.1 | ±20 | ||
| JMTG3005A | JJM | PDFN5x6-8L | N | 30 | 60 | 1.9 | 3.6 | 3.7 | ±20 | ||
| JMTG3005B | JJM | PDFN5x6-8L | N | 30 | 94 | 1.6 | 3.9 | 5.1 | ±20 | ||
| JMTG3005C | JJM | PDFN5x6-8L | N | 30 | 103 | 1.6 | 3.2 | 4.2 | ±20 | ||
| JMTG3008A | JJM | PDFN5x6-8L | N | 30 | 40 | 1.8 | 6.6 | 8.6 | ±20 | ||
| JMTG3008D | JJM | PDFN5x6-8L-D | N+N | 30 | 41 | 1.6 | 6.1 | 7.9 | ±20 | ||
| JMTG90N02A | JJM | PDFN5x6-8L | N | 20 | 75 | 0.8 | ±12 | ||||
| JMTI080N02A | JJM | TO-251-3L | N | 20 | 50 | 0.8 | ±12 | ||||
| JMTI3005A | JJM | TO-251-3L | N | 30 | 90 | 1.9 | 3.3 | 4.3 | ±20 | ||
| JMTJ100N02A | JJM | SOT-23-3L | N | 20 | 8 | 0.8 | ±12 | ||||
| JMTJ2302C | JJM | SOT-23-3L | N | 20 | 4 | 0.8 | ±12 | ||||
| JMTJ3400A | JJM | SOT-23-3L | N | 30 | 5.8 | 1 | 20.5 | 26.7 | ±12 | ||
| JMTJ3404A | JJM | SOT-23-3L | N | 30 | 5 | 1.8 | 18 | 23 | ±20 | ||
| JMTK018N03A | JJM | TO-252-3L | N | 30 | 190 | 1.6 | 2 | 2.6 | ±20 | ||
| JMTK100N02A | JJM | TO-252-3L | N | 20 | 30 | 0.8 | ±12 | ||||
| JMTK100N03A | JJM | TO-252-3L | N | 30 | 40 | 1.6 | 7.8 | 10 | ±20 | ||
| JMTK120N03A | JJM | TO-252-3L | N | 30 | 20 | 1.7 | 9.4 | 12.2 | ±20 | ||
| JMTK2006A | JJM | TO-252-3L | N | 20 | 60 | 0.9 | ±12 | ||||
| JMTK2007A | JJM | TO-252-3L | N | 20 | 50 | 0.8 | ±12 |