碳化硅二极管(Silicon carbide diode, SiC Diodes)是一种半导体器件,由碳化硅材料制成。碳化硅具有高的耐压能力和高的温度耐受性,因此碳化硅二极管具有较低的反向漏电流、高温下稳定性良好、响应速度快等特点。
| 型号 | 制造商 | 封装 | VF/V | IF/A | IR/μA | VR/V |
|---|---|---|---|---|---|---|
| RSS04065D | REASUNOS | TO-252 | 1.4 | 4 | 1 | 650 |
| RSS04065G | REASUNOS | DFN5*6 | 1.4 | 4 | 1 | 650 |
| RSS04065A | REASUNOS | TO-220-2L | 1.4 | 4 | 1 | 650 |
| RSS04065B | REASUNOS | TO-220内绝缘 | 1.4 | 4 | 1 | 650 |
| RSS06065D | REASUNOS | TO-252 | 1.36 | 6 | 1.2 | 650 |
| RSS06065G | REASUNOS | DFN5*6 | 1.36 | 6 | 1.2 | 650 |
| RSS06065R | REASUNOS | DFN8*8 | 1.36 | 6 | 1.2 | 650 |
| RSS06065S | REASUNOS | TO-263 | 1.36 | 6 | 1.2 | 650 |
| RSS06065A | REASUNOS | TO-220-2L | 1.36 | 6 | 1.2 | 650 |
| RSS06065B | REASUNOS | TO-220内绝缘 | 1.36 | 6 | 1.2 | 650 |
| RSS08065D | REASUNOS | TO-252 | 1.39 | 8 | 6 | 650 |
| RSS08065G | REASUNOS | DFN5*6 | 1.39 | 8 | 6 | 650 |
| RSS08065R | REASUNOS | DFN8*8 | 1.39 | 8 | 6 | 650 |
| RSS08065S | REASUNOS | TO-263 | 1.39 | 8 | 6 | 650 |
| RSS08065A | REASUNOS | TO-220-2L | 1.39 | 8 | 6 | 650 |
| RSS08065B | REASUNOS | TO-220内绝缘 | 1.39 | 8 | 6 | 650 |
| RSS10065D | REASUNOS | TO-252 | 1.37 | 10 | 5 | 650 |
| RSS10065R | REASUNOS | DFN8*8 | 1.37 | 10 | 5 | 650 |
| RSS10065S | REASUNOS | TO-263 | 1.37 | 10 | 5 | 650 |
| RSS10065A | REASUNOS | TO-220-2L | 1.37 | 10 | 5 | 650 |