中压MOSFET（Medium-voltage MOSFET）在电压和电流能力之间取得了平衡，是工业应用中最常见的类型。漏源电压（Vds）通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步，它通过在传统的漂移区中插入P型柱，实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 制造商 | 封装 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V |
|---|---|---|---|---|---|---|---|---|---|---|---|
| JMTG035N04L | JJM | PDFN5x6-8L | N | 40 | 100 | 1.5 | 2.4 | 2.9 | ±20 | ||
| JMTG055N04A | JJM | PDFN5x6-8L | N | 40 | 75 | 1.9 | 3.8 | 4.9 | ±20 | ||
| JMTG060N06A | JJM | PDFN5x6-8L | N | 60 | 90 | 3 | 3.9 | 4.9 | ±25 | ||
| JMTG062N04D | JJM | PDFN5x6-8L-D | N+N | 40 | 55 | 1.8 | 6.3 | 8.2 | ±20 | ||
| JMTG070N06A | JJM | PDFN5x6-8L | N | 60 | 70 | 3 | 4.6 | 5.8 | ±20 | ||
| JMTG080N04D | JJM | PDFN5x6-8L-D | N+N | 40 | 45 | 1.9 | 7.4 | 9.6 | ±20 | ||
| JMTG100N04A | JJM | PDFN5x6-8L | N | 40 | 40 | 1.8 | 8.4 | 10.9 | ±20 | ||
| JMTG100N06A | JJM | PDFN5x6-8L | N | 60 | 55 | 1.5 | 7.7 | 10 | ±20 | ||
| JMTG100N06D | JJM | PDFN5x6-8L-D | N+N | 60 | 33 | 1.5 | 10.4 | 12.9 | ±20 | ||
| JMTG110N06A | JJM | PDFN5x6-8L | N | 60 | 65 | 3 | 8.6 | 10.8 | ±25 | ||
| JMTG110N06D | JJM | PDFN5x6-8L-D | N+N | 60 | 33 | 3 | 9.8 | 12.8 | ±25 | ||
| JMTG170C04D | JJM | PDFN5x6-8L-D | N+P | 40-40 | 16-16 | 1.9-1.6 | 14.4-31.0 | 20.0-50.0 | ±20 | ||
| JMTG170N06A | JJM | PDFN5x6-8L | N | 60 | 40 | 1.5 | 12.6 | 15 | ±20 | ||
| JMTG170N06D | JJM | PDFN5x6-8L-D | N+N | 60 | 25 | 1.6 | 16 | 20 | ±20 | ||
| JMTG28DN10D | JJM | PDFN5x6-8L-D | N+N | 100 | 4.5 | 1.5 | 225 | 295 | ±20 | ||
| JMTG290N06D | JJM | PDFN5x6-8L-D | N+N | 60 | 18 | 1.5 | 25 | 33 | ±20 | ||
| JMTG320N10A | JJM | PDFN5x6-8L | N | 100 | 28 | 1.6 | 22.4 | 30 | ±20 | ||
| JMTG4004A | JJM | PDFN5x6-8L | N | 40 | 123 | 1.6 | 3.1 | 3.5 | ±20 | ||
| JMTG60N04B | JJM | PDFN5x6-8L | N | 40 | 50 | 1.9 | 6.1 | 7.9 | ±20 | ||
| JMTI10N10A | JJM | TO-251-3L | N | 100 | 10 | 1.5 | 86 | 110 | ±20 |