低压 MOSFET （Low-voltage MOSFET）是多种电流应用中必不可少的电子元件，因为它们能够以低功率损耗切换大电流。它们在低电压下工作，设计为在漏源电压（Vds）通常低于 200 V 下工作。在消费电子、电信、工业自动化、能源管理系统、稳压器和电源等领域尤为常见。低压 MOSFET具有与高压设计相同的功能。它们非常适合需要高效率和处理大电流能力的应用，即使在电源电压非常低的情况下也是如此。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V | 封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| JMTV080N02A | JJM | N | 20 | 20 | 0.8 | ±12 | DFN2020-6L | ||||
| JMTV100N02A | JJM | N | 20 | 10 | 0.8 | ±12 | DFN2020-6L | ||||
| JMTV120N03A | JJM | N | 30 | 12 | 1.7 | 9.2 | 12 | ±20 | DFN2020-6L | ||
| JMTV240N03A | JJM | N | 30 | 10 | 1.7 | 15.6 | 20.3 | ±20 | DFN2020-6L | ||
| JMTV3010A | JJM | N | 30 | 20 | 1.6 | 8.5 | 11.1 | ±20 | DFN2020-6L | ||
| JMTV3010B | JJM | N | 30 | 11.3 | 1.2 | 7.8 | 10.2 | ±20 | DFN2020-6L | ||
| JMTV3400A | JJM | N | 30 | 8 | 1 | 17.7 | 23 | ±12 | DFN2020-6L | ||
| JMTD3139K | JJM | P | -20 | -1.2 | -0.7 | ±10 | DFN1006-3L | ||||
| JMTG030P02A | JJM | P | -20 | -85 | -0.6 | ±12 | PDFN5x6-8L | ||||
| JMTG050P03A | JJM | P | -30 | -80 | -1.7 | 3.7 | 4.1 | ±20 | PDFN5x6-8L | ||
| JMTG060P03A | JJM | P | -30 | -111 | -1.8 | 3.8 | 5.4 | ±20 | PDFN5x6-8L | ||
| JMTG080P03A | JJM | P | -30 | -97 | -1.6 | 5 | 7 | ±20 | PDFN5x6-8L | ||
| JMTG100P03A | JJM | P | -30 | -45 | -1.6 | 6.5 | 9.5 | ±20 | PDFN5x6-8L | ||
| JMTI080P03A | JJM | P | -30 | -60 | -1.5 | 5.8 | 7.5 | ±20 | TO-251-3L | ||
| JMTI210P02A | JJM | P | -20 | -20 | -0.65 | ±12 | TO-251-3L | ||||
| JMTJ210P02A | JJM | P | -20 | -7 | -0.8 | ±12 | SOT-23-3L | ||||
| JMTJ2333A | JJM | P | -12 | -7 | -0.7 | ±12 | SOT-23-3L | ||||
| JMTJ250P02A | JJM | P | -20 | -5 | -0.7 | ±12 | SOT-23-3L | ||||
| JMTJ3401A | JJM | P | -30 | -4.2 | -0.9 | 36 | 47 | ±12 | SOT-23-3L | ||
| JMTJ3401B | JJM | P | -30 | -4 | -1 | 49 | 64 | ±12 | SOT-23-3L |