主页产品 MOSFET 高压MOSFET LEADSILICON

LEADSILICON 高压MOSFET

高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。

可用LEADSILICON高压MOSFET型号：46个
型号 品牌 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ) @VGS 10V RDS(ON)_Max (mΩ) @VGS 10V VGS_Max (V) 封装
LPAC9N20A LEADSILICON S-N 200 9 1.5 220 300 ±30 PDFNWB5×6-8L
LP2E1N50A LEADSILICON S-N 500 1 3 8500 10500 ±30 SOT-23
LPPF20N50A LEADSILICON S-N 500 20 3 220 270 ±30 TO-220F
LPPF13N50A LEADSILICON S-N 500 13 3 400 480 ±30 TO-220F
LP1T1N60A LEADSILICON S-N 600 1 3 8300 9500 ±30 SOT-223
LP1D7N60A LEADSILICON S-N 600 7 3 1050 1300 ±30 TO-251
LP1D4N60A LEADSILICON S-N 600 4 3 2400 2700 ±30 TO-251
LP1U7N60A LEADSILICON S-N 600 7 3 1050 1300 ±30 TO-252
LP1U4N60A LEADSILICON S-N 600 4 3 2400 2700 ±30 TO-252
LP1U2N60A LEADSILICON S-N 600 2 3 3300 4200 ±30 TO-252
LP2P4N60A LEADSILICON S-N 600 4 3 2400 2700 ±30 TO-220C
LPPF4N60A LEADSILICON S-N 600 4 3 2400 2700 ±30 TO-220F
LPCB4N60A LEADSILICON S-N 600 4 3 2400 2700 ±30 TO-263-2L
LP1D4N65A LEADSILICON S-N 650 4 3 2600 3100 ±30 TO-251
LPED2N65A LEADSILICON S-N 650 2 3 4000 5300 ±30 TO-251
LP1U7N65A LEADSILICON S-N 650 7.5 3 1100 1350 ±30 TO-252
LP1U4N65A LEADSILICON S-N 650 4 3 2600 3100 ±30 TO-252
LP1U2N65A LEADSILICON S-N 650 2 3 4000 5000 ±30 TO-252
LP2P4N65A LEADSILICON S-N 650 4 3 2600 3100 ±30 TO-220C
LPPF12N65A LEADSILICON S-N 650 12 3 640 800 ±30 TO-220F
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