主页产品 MOSFET 高压MOSFET LEADSILICON

LEADSILICON 高压MOSFET

高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。

可用LEADSILICON高压MOSFET型号：46个
型号 品牌 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ) @VGS 10V RDS(ON)_Max (mΩ) @VGS 10V VGS_Max (V) 封装
LPPF10N65A LEADSILICON S-N 650 10 4 800 1000 ±30 TO-220F
LPPF7N65A LEADSILICON S-N 650 7.5 3 1100 1350 ±30 TO-220F
LPPF5N65A LEADSILICON S-N 650 5 3 1550 1900 ±30 TO-220F
LPPF5N65X LEADSILICON S-N 650 5 3 2200 2600 ±30 TO-220F
LPPF4N65A LEADSILICON S-N 650 4 3 2600 3100 ±30 TO-220F
LPCB7N65A LEADSILICON S-N 650 7.5 3 1100 1350 ±30 TO-263-2L
LPCB5N65A LEADSILICON S-N 650 5 3 1550 1900 ±30 TO-263-2L
LPCB4N65A LEADSILICON S-N 650 4 3 2600 3100 ±30 TO-263-2L
LP1D7N70A LEADSILICON S-N 700 7 3 1300 1550 ±30 TO-251
LPPF10N70A LEADSILICON S-N 700 10 3 900 1100 ±30 TO-220F
LPPF7N70A LEADSILICON S-N 700 7 3 1300 1550 ±30 TO-220F
LPPF4N70A LEADSILICON S-N 700 4 3 3200 3800 ±30 TO-220F
LPPF8N65A LEADSILICON S-N 800 8 3 1200 1400 ±30 TO-220F
LCPF60R230A LEADSILICON S-N 600 15 3.5 230 280 ±30 TO-220F
LCTN60R090AF LEADSILICON S-N 600 35 3.5 90 105 ±30 TO-247
LCTN60R080A LEADSILICON S-N 600 38 4 80 90 ±30 TO-247
LC1D65R550A LEADSILICON S-N 650 8 3 550 640 ±30 TO-251
LC1D65R1K0A LEADSILICON S-N 650 5 3 1000 1200 ±30 TO-251
LC1U65R1K0A LEADSILICON S-N 650 5 3 1000 1200 ±30 TO-252
LCPF65R320Y LEADSILICON S-N 650 11 3.5 320 380 ±30 TO-220F
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