高压MOSFET的优点是工作电压是中高压(一般小于40V),尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压,高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max/A | VGS(th)Typ/V | RDS(ON)Typ (mΩ) @VGS 10V | RDS(ON)_Max (mΩ) @VGS 10V | VGS_Max (V) | 封装 |
|---|---|---|---|---|---|---|---|---|---|
| JMH65R360MF | JJM | N | 650 | 7.4 | 3.4 | 311 | 360 | ±30 | TO-220FP-3L |
| JMH65R360MK | JJM | N | 650 | 7.3 | 3.3 | 338 | 360 | ±30 | TO-252-3L |
| JMH65R360PF | JJM | N | 650 | 8.2 | 3.4 | 268 | 348 | ±30 | TO-220FP-3L |
| JMH65R360PK | JJM | N | 650 | 11.7 | 3.3 | 283 | 368 | ±30 | TO-252-3L |
| JMH65R400MFFD | JJM | N | 650 | 9 | 4 | 338 | 400 | ±30 | TO-220FP-3L |
| JMH65R400MKFD | JJM | N | 650 | 7 | 4 | 350 | 400 | ±30 | TO-252-3L |
| JMH65R400MPLNFD | JJM | N | 650 | 9 | 3.9 | 359 | 400 | ±30 | DFN8080-4L |
| JMH65R430ACFP | JJM | N | 650 | 11.2 | 3.5 | 364 | 430 | ±20 | TO-220FP-NL |
| JMH65R430AE | JJM | N | 650 | 11.2 | 3.5 | 364 | 430 | ±20 | TO-263-3L |
| JMH65R430AF | JJM | N | 650 | 11.2 | 3.5 | 364 | 430 | ±20 | TO-220FP-3L |
| JMH65R430AK | JJM | N | 650 | 11.2 | 3.5 | 370 | 430 | ±20 | TO-252-3L |
| JMH65R430APLN | JJM | N | 650 | 10.4 | 3.5 | 370 | 430 | ±20 | DFN8080-4L |
| JMH65R600MF | JJM | N | 650 | 6.9 | 3.5 | 507 | 600 | ±30 | TO-220FP-3L |
| JMH65R600MK | JJM | N | 650 | 7.4 | 3.5 | 535 | 600 | ±30 | TO-252-3L |
| JMH65R640AK | JJM | N | 650 | 9 | 3.1 | 578 | 650 | ±20 | TO-252-3L |
| JMH65R900PK | JJM | N | 650 | 4.6 | 3.2 | 709 | 900 | ±30 | TO-252-3L |
| JMH65R950MF | JJM | N | 650 | 5.3 | 3.4 | 866 | 950 | ±30 | TO-220FP-3L |
| JMH65R950MPLN | JJM | N | 650 | 7 | 3.3 | 908 | 950 | ±30 | DFN8080-4L |
| JMH65R980ACFP | JJM | N | 650 | 4 | 3.5 | 895 | 980 | ±20 | TO-220FP-NL |
| JMH65R980AF | JJM | N | 650 | 4 | 3.5 | 895 | 980 | ±20 | TO-220FP-3L |