主页产品 MOSFET 高压MOSFET JJM

JJM 高压MOSFET

高压MOSFET的优点是工作电压是中高压（一般小于40V），尺寸小和集成度高。高压 MOS 的器件结构决定了它的源极和漏极都能承受高压，高压 MOSFET适合用于模拟电路和输出驱动。高压MOSFET产品广泛应用于可再生能源、电动汽车、工业自动化和消费电子产品等领域。

可用JJM高压MOSFET型号：110个
型号 品牌 类型 VDS_Max/V ID_Max/A VGS(th)Typ/V RDS(ON)Typ (mΩ) @VGS 10V RDS(ON)_Max (mΩ) @VGS 10V VGS_Max (V) 封装
JMH65R030PSFD JJM N 650 65 3.8 21 30 ±30 TO-247-3L
JMH65R040ASFD JJM N 650 71 4 35 40 ±20 TO-247-3L
JMH65R040PSFD JJM N 650 53 3.9 34 40 ±30 TO-247-3L
JMH65R070PCFD JJM N 650 37 3.8 60 70 ±30 TO-220-3L
JMH65R070PFFD JJM N 650 22 3.9 59 70 ±30 TO-220FP-3L
JMH65R070PSFD JJM N 650 38 3.9 61 70 ±30 TO-247-3L
JMH65R090PCFD JJM N 650 29 3.8 73 90 ±30 TO-220-3L
JMH65R090PFFD JJM N 650 18 3.8 73 94 ±30 TO-220FP-3L
JMH65R090PSFD JJM N 650 29 3.9 76 90 ±30 TO-247-3L
JMH65R090PTLFD JJM N 650 24 3.3 80 90 ±30 PowerJE®10x12
JMH65R090PZFFD JJM N 650 22 3.8 70 90 ±30 TO-3PF
JMH65R110ACFD JJM N 650 35 3.5 99 110 ±30 TO-220-3L
JMH65R110AEFD JJM N 650 35 3.5 98 110 ±30 TO-263-3L
JMH65R110APLNFD JJM N 650 32 3.5 95 110 ±30 DFN8080-4L
JMH65R110ASFD JJM N 650 32 3.5 95 110 ±30 TO-247-3L
JMH65R110PCFD JJM N 650 22 3.4 93 110 ±30 TO-220-3L
JMH65R110PEFD JJM N 650 25 3.3 98 110 ±30 TO-263-3L
JMH65R110PFFD JJM N 650 16 3.3 90 110 ±30 TO-220FP-3L
JMH65R110PPLNFD JJM N 650 19 3.3 95 110 ±30 DFN8080-4L
JMH65R110PSFD JJM N 650 26 3.5 97 110 ±30 TO-247-3L
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