中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V | 封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RS100N120S | REASUNOS | N | 100 | 120 | 4.3 | 5.3 | TO-263 | ||||
| RS100N135T | REASUNOS | N | 100 | 135 | 3.7 | 4.2 | TO-220 | ||||
| RS100N135HT | REASUNOS | N | 100 | 135 | 3.7 | 4.2 | TO-220 | ||||
| RS100N135HS | REASUNOS | N | 100 | 135 | 4.2 | 5 | TO-263 | ||||
| RS100N180T | REASUNOS | N | 100 | 180 | 3 | 4.4 | TO-220 | ||||
| RS100N180S | REASUNOS | N | 100 | 180 | 2.9 | 3.6 | TO-263 | ||||
| RS100N190T | REASUNOS | N | 100 | 190 | 2.3 | 3 | TO-220 | ||||
| RS100N190S | REASUNOS | N | 100 | 190 | 2.2 | 2.8 | TO-263 | ||||
| RS100N210T | REASUNOS | N | 100 | 210 | 1.9 | 2.4 | TO-220 | ||||
| RS100N210S | REASUNOS | N | 100 | 210 | 1.9 | 2.4 | TO-263 | ||||
| RS110N200T | REASUNOS | N | 110 | 198 | 3.4 | 4 | TO-220 | ||||
| RS110N200S | REASUNOS | N | 110 | 198 | 3.4 | 4 | TO-263 | ||||
| RS100N300I | REASUNOS | N | 100 | 300 | 1.7 | 2.2 | TOLL | ||||
| RS100N60G | REASUNOS | N | 100 | 60 | 7.2 | 8 | DFN5*6 | ||||
| RS100N60HG | REASUNOS | N | 100 | 60 | 7.2 | 8 | DFN5*6 | ||||
| RS100N85G | REASUNOS | N | 100 | 85 | 5.8 | 6.5 | DFN5*6 | ||||
| RS100N85HG | REASUNOS | N | 100 | 85 | 5.8 | 6.5 | DFN5*6 | ||||
| RS100N125G | REASUNOS | N | 100 | 125 | 4 | 4.6 | DFN5*6 | ||||
| RS100N125HG | REASUNOS | N | 100 | 125 | 4 | 4.6 | DFN5*6 | ||||
| RS100N150G | REASUNOS | N | 100 | 150 | 3.5 | 4 | DFN5*6 |