REASUNOS 中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用REASUNOS中压MOSFET型号:50个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
RS100N120S REASUNOS N 100 120 4.3 5.3 TO-263
RS100N135T REASUNOS N 100 135 3.7 4.2 TO-220
RS100N135HT REASUNOS N 100 135 3.7 4.2 TO-220
RS100N135HS REASUNOS N 100 135 4.2 5 TO-263
RS100N180T REASUNOS N 100 180 3 4.4 TO-220
RS100N180S REASUNOS N 100 180 2.9 3.6 TO-263
RS100N190T REASUNOS N 100 190 2.3 3 TO-220
RS100N190S REASUNOS N 100 190 2.2 2.8 TO-263
RS100N210T REASUNOS N 100 210 1.9 2.4 TO-220
RS100N210S REASUNOS N 100 210 1.9 2.4 TO-263
RS110N200T REASUNOS N 110 198 3.4 4 TO-220
RS110N200S REASUNOS N 110 198 3.4 4 TO-263
RS100N300I REASUNOS N 100 300 1.7 2.2 TOLL
RS100N60G REASUNOS N 100 60 7.2 8 DFN5*6
RS100N60HG REASUNOS N 100 60 7.2 8 DFN5*6
RS100N85G REASUNOS N 100 85 5.8 6.5 DFN5*6
RS100N85HG REASUNOS N 100 85 5.8 6.5 DFN5*6
RS100N125G REASUNOS N 100 125 4 4.6 DFN5*6
RS100N125HG REASUNOS N 100 125 4 4.6 DFN5*6
RS100N150G REASUNOS N 100 150 3.5 4 DFN5*6
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