REASUNOS 中压MOSFET

中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。

可用REASUNOS中压MOSFET型号:50个
型号 品牌 类型 VDS_Max/V ID_Max /A VGS(th)Typ/V RDS(ON)Typ (mΩ)@VGS 10V RDS(ON)Max (mΩ)@VGS 10V RDS(ON)Typ (mΩ)@VGS 4.5V RDS(ON)Max (mΩ)@VGS 4.5V VGS_Max/V 封装
RS40N100G REASUNOS N 40 100 2.8 3.5 DFN5*6
RS40N120D REASUNOS N 40 120 2.8 3.5 TO-252
RS40N120T REASUNOS N 40 120 2.8 3.5 TO-220
RS40N130G REASUNOS N 40 130 1.45 1.75 DFN5*6
RS40N180T REASUNOS N 40 180 1.6 2 TO-220
RS2310E REASUNOS N 60 3 70 105 SOT-23
RS60N30D REASUNOS N 60 30 22 35 TO-252
RS60N50D REASUNOS N 60 50 14 20 TO-252
RS60N50T REASUNOS N 60 50 14 22 TO-220
RS60N50S REASUNOS N 60 50 14 22 TO-263
RS60N130G REASUNOS N 60 130 2.1 2.5 DFN5*6
RS60N200T REASUNOS N 60 200 2.5 3.2 TO-220
RS85N140T REASUNOS N 85 140 4.7 5.8 TO-220
RS85N140S REASUNOS N 85 140 4.5 5.8 TO-263
RS85N150T REASUNOS N 85 150 2.8 3.6 TO-220
RS85N150S REASUNOS N 85 150 2.7 3.4 TO-263
RS100N78HT REASUNOS N 100 78 8.2 9.5 TO-220
RS100N78T REASUNOS N 100 78 8.2 9.5 TO-220
RS100N100T REASUNOS N 100 100 7 8.5 TO-220
RS100N120T REASUNOS N 100 120 4.3 5.3 TO-220
111