中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V | 封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RS40N100G | REASUNOS | N | 40 | 100 | 2.8 | 3.5 | DFN5*6 | ||||
| RS40N120D | REASUNOS | N | 40 | 120 | 2.8 | 3.5 | TO-252 | ||||
| RS40N120T | REASUNOS | N | 40 | 120 | 2.8 | 3.5 | TO-220 | ||||
| RS40N130G | REASUNOS | N | 40 | 130 | 1.45 | 1.75 | DFN5*6 | ||||
| RS40N180T | REASUNOS | N | 40 | 180 | 1.6 | 2 | TO-220 | ||||
| RS2310E | REASUNOS | N | 60 | 3 | 70 | 105 | SOT-23 | ||||
| RS60N30D | REASUNOS | N | 60 | 30 | 22 | 35 | TO-252 | ||||
| RS60N50D | REASUNOS | N | 60 | 50 | 14 | 20 | TO-252 | ||||
| RS60N50T | REASUNOS | N | 60 | 50 | 14 | 22 | TO-220 | ||||
| RS60N50S | REASUNOS | N | 60 | 50 | 14 | 22 | TO-263 | ||||
| RS60N130G | REASUNOS | N | 60 | 130 | 2.1 | 2.5 | DFN5*6 | ||||
| RS60N200T | REASUNOS | N | 60 | 200 | 2.5 | 3.2 | TO-220 | ||||
| RS85N140T | REASUNOS | N | 85 | 140 | 4.7 | 5.8 | TO-220 | ||||
| RS85N140S | REASUNOS | N | 85 | 140 | 4.5 | 5.8 | TO-263 | ||||
| RS85N150T | REASUNOS | N | 85 | 150 | 2.8 | 3.6 | TO-220 | ||||
| RS85N150S | REASUNOS | N | 85 | 150 | 2.7 | 3.4 | TO-263 | ||||
| RS100N78HT | REASUNOS | N | 100 | 78 | 8.2 | 9.5 | TO-220 | ||||
| RS100N78T | REASUNOS | N | 100 | 78 | 8.2 | 9.5 | TO-220 | ||||
| RS100N100T | REASUNOS | N | 100 | 100 | 7 | 8.5 | TO-220 | ||||
| RS100N120T | REASUNOS | N | 100 | 120 | 4.3 | 5.3 | TO-220 |